Onefold Coordinated Oxygen Atom: An Electron Trap in the Silicon Oxide Full article
Journal |
Microelectronics Reliability
ISSN: 0026-2714 |
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Output data | Year: 2003, Volume: 43, Number: 4, Pages: 665-669 Pages count : 5 DOI: 10.1016/S0026-2714(03)00030-1 | ||||||||||
Tags | Crystal defects; Electron traps; Gates (transistor); Silica | ||||||||||
Authors |
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Affiliations |
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Funding (1)
1 | International Association for the Promotion of Co-operation with Scientists from the New Independent States of the Former Soviet Union | 97-0347 |
Abstract:
It has been long suggested that the dropSiOH defect is an electron or "water" trap in silicon dioxide based on some indirect evidences. In this work, quantum calculation on the capturing properties of non-bridging oxygen hole center with unpaired electron dropSiO and hydrogen defect SiOH in silicon oxide are performed with the ab initio density-functional method. It was found that the dropSiO defect is an electron trap and this defect should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. We found that the dropSiOH defect could not be an electron trap according to the present calculation results.
Cite:
Gritsenko V.A.
, Shaposhnikov A.V.
, Novikov Y.N.
, Baraban A.P.
, Wong H.
, Zhidomirov G.M.
, Roger M.
Onefold Coordinated Oxygen Atom: An Electron Trap in the Silicon Oxide
Microelectronics Reliability. 2003. V.43. N4. P.665-669. DOI: 10.1016/S0026-2714(03)00030-1 WOS Scopus РИНЦ
Onefold Coordinated Oxygen Atom: An Electron Trap in the Silicon Oxide
Microelectronics Reliability. 2003. V.43. N4. P.665-669. DOI: 10.1016/S0026-2714(03)00030-1 WOS Scopus РИНЦ
Dates:
Submitted: | Sep 16, 2002 |
Accepted: | Jan 7, 2003 |
Published online: | Mar 11, 2003 |
Published print: | Apr 1, 2003 |
Identifiers:
Web of science | WOS:000182363300019 |
Scopus | 2-s2.0-0037381456 |
Elibrary | 13425155 |
Chemical Abstracts | 2003:380541 |
Chemical Abstracts (print) | 140:102658 |
OpenAlex | W2034662491 |