Diffraction Method for Structure Investigations of Semiconductor Heterosystems Using Synchrotron Variable Wavelength Full article
Conference |
XII National Synchrotron Radiation Conference 13-18 Jul 1998 , Новосибирск |
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Journal |
Nuclear Instruments and Methods in Physics Research Section A
ISSN: 0168-9002 |
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Output data | Year: 2000, Volume: 448, Number: 1-2, Pages: 282-285 Pages count : 4 DOI: 10.1016/S0168-9002(00)00227-8 | ||||
Tags | Crystal lattices; Diffraction; Epitaxial growth; Molecular beam epitaxy; Numerical methods; Semiconducting aluminum compounds; Semiconductor device structures; Semiconductor superlattices; Synchrotron radiation; X ray diffraction analysis | ||||
Authors |
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Affiliations |
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Funding (4)
1 | Russian Foundation for Basic Research | 00-02-17485 |
2 | Russian Foundation for Basic Research | 00-02-17994 |
3 | The Ministry of Education and Science of the Russian Federation | 97-2025 |
4 | The Ministry of Education and Science of the Russian Federation | 99-3015 |
Abstract:
The synchrotron investigation method is presented for structure research of semiconductor heterosystems with homogeneous layers and superlattices using the variable wavelength of a synchrotron radiation beam passing at the immobile sample. The used experimental procedure is potentially suitable for in situ X-ray diffractometry during the growth of epitaxial layers. For the proposed procedure, the equations are derived for the first time to measure tetragonal crystal lattice distortions and superlattice period distribution. The experimental results have been obtained for heterosystems with layers of AlxGa1−xAs grown by molecular-beam epitaxy (MBE) onto GaAs substrates.
Cite:
Trukhanov E.M.
, Revenko M.A.
, Amirzhanov R.M.
, Fedorov A.A.
, Kolesnikov A.V.
, Nikitenko S.G.
, Vasilenko A.P.
Diffraction Method for Structure Investigations of Semiconductor Heterosystems Using Synchrotron Variable Wavelength
Nuclear Instruments and Methods in Physics Research Section A. 2000. V.448. N1-2. P.282-285. DOI: 10.1016/S0168-9002(00)00227-8 WOS Scopus РИНЦ
Diffraction Method for Structure Investigations of Semiconductor Heterosystems Using Synchrotron Variable Wavelength
Nuclear Instruments and Methods in Physics Research Section A. 2000. V.448. N1-2. P.282-285. DOI: 10.1016/S0168-9002(00)00227-8 WOS Scopus РИНЦ
Dates:
Published print: | Jun 21, 2000 |
Published online: | Jun 22, 2000 |
Identifiers:
Web of science | WOS:000088282500057 |
Scopus | 2-s2.0-0034205310 |
Elibrary | 13347124 |
Chemical Abstracts | 2000:434631 |
Chemical Abstracts (print) | 133:230607 |
OpenAlex | W2034855965 |
Citing:
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