Interaction with Charge Carriers and the Optical Absorption Spectrum of an Associate Formed by Elementary Defects (an Oxygen Vacancy and a Silylene Center) in SiO2 Full article
Journal |
Physics of the Solid State
ISSN: 1063-7834 , E-ISSN: 1090-6460 |
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Output data | Year: 2004, Volume: 46, Number: 11, Pages: 2021-2025 Pages count : 5 DOI: 10.1134/1.1825543 | ||||
Tags | Oxygen; Spectroscopy; Silicon; SiO2; Dioxide | ||||
Authors |
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Affiliations |
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Funding (1)
1 | Siberian Branch of the Russian Academy of Sciences | 116 |
Abstract:
The ability of intrinsic defects in SiO2 to capture electrons and holes is investigated by quantum-chemical methods. It is established that a twofold-coordinated silicon atom with two unpaired electrons, namely, the silylene center =Si:, and a silicon-silicon bond, namely, the oxygen vacancy ≡Si-Si≡, are electron-hole traps in SiO2. The properties of a defect in the form of an associate of the two above centers are studied. It is shown that this defect can capture electrons and holes; i.e., it is an amphoteric defect in SiO2. The optical absorption spectrum of the studied associate virtually coincides with that of the oxy radical ≡Si-O· in silicon dioxide.
Cite:
Patrakov A.E.
, Gritsenko V.A.
, Zhidomirov G.M.
Interaction with Charge Carriers and the Optical Absorption Spectrum of an Associate Formed by Elementary Defects (an Oxygen Vacancy and a Silylene Center) in SiO2
Physics of the Solid State. 2004. V.46. N11. P.2021-2025. DOI: 10.1134/1.1825543 WOS Scopus РИНЦ
Interaction with Charge Carriers and the Optical Absorption Spectrum of an Associate Formed by Elementary Defects (an Oxygen Vacancy and a Silylene Center) in SiO2
Physics of the Solid State. 2004. V.46. N11. P.2021-2025. DOI: 10.1134/1.1825543 WOS Scopus РИНЦ
ArticleLinkType.TRANSLATED_TO_ORIGINAL:
Патраков А.Е.
, Гриценко В.А.
, Жидомиров Г.М.
Взаимодействие с носителями заряда и спектр оптического поглощения ассоциата элементарных дефектов в SiO2: вакансия кислорода / силиленовый центр
Физика твердого тела. 2004. Т.46. №11. С.1955-1959. РИНЦ
Взаимодействие с носителями заряда и спектр оптического поглощения ассоциата элементарных дефектов в SiO2: вакансия кислорода / силиленовый центр
Физика твердого тела. 2004. Т.46. №11. С.1955-1959. РИНЦ
Dates:
Submitted: | Dec 9, 2003 |
Published print: | Nov 1, 2004 |
Identifiers:
Web of science | WOS:000225042800008 |
Scopus | 2-s2.0-20444472285 |
Elibrary | 13459333 |
Chemical Abstracts | 2004:967600 |
Chemical Abstracts (print) | 143:123870 |
OpenAlex | W2086399735 |