Valence Band Offset at Silicon/Silicon Nitride and Silicon Nitride/Silicon Oxide Interfaces Full article
Journal |
Thin Solid Films
ISSN: 0040-6090 |
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Output data | Year: 2003, Volume: 437, Number: 1-2, Pages: 135-139 Pages count : 5 DOI: 10.1016/S0040-6090(03)00601-1 | ||||||||
Tags | Silicon nitride, Valence band, X-ray photoelectron spectroscopy | ||||||||
Authors |
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Affiliations |
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Funding (1)
1 | Government of Hong Kong | CityU 7001134 |
Abstract:
The valence band electronic structure of silicon nitride (Si3N4) is studied using the first principal quantum chemical calculation, X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Assuming that the valence band is formed with N 2p and Si 3s, 3p and 3d electrons and based on the XPS and UPS results, the valance band offset at the Si/Si3N4 interface was estimated to be 1.5±0.2 eV. This hole barrier explains the hole dominating conduction in Si/Si3N4 structure when a positive potential is applied to the silicon substrate. In addition, the UPS study reveals that the valence band offset at the Si3N4/silicon oxide interface is 2.5±0.2 eV.
Cite:
Gritsenko V.A.
, Shaposhnikov A.V.
, Kwok W.M.
, Wong H.
, Jidomirov G.M.
Valence Band Offset at Silicon/Silicon Nitride and Silicon Nitride/Silicon Oxide Interfaces
Thin Solid Films. 2003. V.437. N1-2. P.135-139. DOI: 10.1016/S0040-6090(03)00601-1 WOS Scopus РИНЦ
Valence Band Offset at Silicon/Silicon Nitride and Silicon Nitride/Silicon Oxide Interfaces
Thin Solid Films. 2003. V.437. N1-2. P.135-139. DOI: 10.1016/S0040-6090(03)00601-1 WOS Scopus РИНЦ
Dates:
Submitted: | Aug 27, 2002 |
Accepted: | Apr 9, 2003 |
Published online: | Jun 4, 2003 |
Published print: | Aug 1, 2003 |
Identifiers:
Web of science | WOS:000184367600020 |
Scopus | 2-s2.0-0038108767 |
Elibrary | 13420944 |
Chemical Abstracts | 2003:539403 |
Chemical Abstracts (print) | 139:314997 |
OpenAlex | W2086778188 |