Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots Full article
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Journal of Experimental and Theoretical Physics Letters (JETP Letters)
ISSN: 0021-3640 , E-ISSN: 1090-6487 |
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Output data | Year: 2014, Volume: 99, Number: 2, Pages: 76-81 Pages count : 6 DOI: 10.1134/S0021364014020027 | ||||||
Tags | DEFORMATION POTENTIALS; GAP; SEMICONDUCTORS | ||||||
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Abstract:
Band alignment of heterostructures with pseudomorphic GaSb1 − x P x /GaP self-assembled quantum dots (SAQDs) lying on a wetting layer was studied. Coexistence of type-I and type-II band alignment was found within the same heterostructure. Wetting layer has band alignment of type-I with the lowest electronic state belonging to the X XY valley of GaSb1 − x P x conduction band, in contrast to SAQDs, which have band alignment of type-II, independently of the ternary alloy composition x. It is shown that type-I-type-II transition is a result of GaP matrix deformation around the SAQD.
Cite:
Abramkin D.S.
, Shamirzaev V.T.
, Putyuto M.A.
, Gutakovskii A.K.
, Shamirzaev T.S.
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2014. V.99. N2. P.76-81. DOI: 10.1134/S0021364014020027 WOS Scopus РИНЦ
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2014. V.99. N2. P.76-81. DOI: 10.1134/S0021364014020027 WOS Scopus РИНЦ
Original:
Abramkin D.S.
, Shamirzaev V.T.
, Putyato M.A.
, Gutakovskii A.K.
, Shamirzaev T.S.
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Письма в Журнал экспериментальной и теоретической физики. 2014. V.99. N2. P.81-86. DOI: 10.7868/S0370274X14020040 РИНЦ
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Письма в Журнал экспериментальной и теоретической физики. 2014. V.99. N2. P.81-86. DOI: 10.7868/S0370274X14020040 РИНЦ
Dates:
Submitted: | Nov 8, 2013 |
Published print: | Mar 1, 2014 |
Published online: | Apr 5, 2014 |
Identifiers:
Web of science | WOS:000334246800004 |
Scopus | 2-s2.0-84897948365 |
Elibrary | 21871634 |
Chemical Abstracts | 2014:566198 |
Chemical Abstracts (print) | 162:335129 |
OpenAlex | W2090591456 |