Negative Differential Resistance in High-Power InGaN/GaN Laser Diode Full article
Journal |
Optoelectronics, Instrumentation and Data Processing
ISSN: 8756-6990 , E-ISSN: 1934-7944 |
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Output data | Year: 2016, Volume: 52, Number: 5, Pages: 442-446 Pages count : 5 DOI: 10.3103/S8756699016050058 | ||||||
Tags | laser diode, negative differential resistance | ||||||
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Abstract:
Negative differential resistance in InGaN/GaN ultraviolet laser diodes is demonstrated. Switching between the lower and upper branches of the S-shaped current-voltage characteristic leads to a change in the optical emission power by six orders of magnitude as the current increases from 3 to 15 mA. The occurrence of a negative differential resistance is explained by superlinear injection of charge carriers of the same sign into the high-resistance InGaN quantum well.
Cite:
Shamirzaev V.T.
, Gaisler V.A.
, Shamirzaev T.S.
Negative Differential Resistance in High-Power InGaN/GaN Laser Diode
Optoelectronics, Instrumentation and Data Processing. 2016. V.52. N5. P.442-446. DOI: 10.3103/S8756699016050058 WOS Scopus РИНЦ
Negative Differential Resistance in High-Power InGaN/GaN Laser Diode
Optoelectronics, Instrumentation and Data Processing. 2016. V.52. N5. P.442-446. DOI: 10.3103/S8756699016050058 WOS Scopus РИНЦ
Original:
Шамирзаев В.Т.
, Гайслер В.А.
, Шамирзаев Т.С.
Отрицательное дифференциальное сопротивление в мощных лазерных InGaN/GaN–диодах
Автометрия. 2016. Т.52. №5. С.31-36. DOI: 10.15372/AUT20160505 RSCI РИНЦ
Отрицательное дифференциальное сопротивление в мощных лазерных InGaN/GaN–диодах
Автометрия. 2016. Т.52. №5. С.31-36. DOI: 10.15372/AUT20160505 RSCI РИНЦ
Dates:
Submitted: | Feb 2, 2016 |
Published print: | Sep 1, 2016 |
Published online: | Jan 6, 2017 |
Identifiers:
Web of science | WOS:000393114600005 |
Scopus | 2-s2.0-85008698673 |
Elibrary | 29468200 |
OpenAlex | W2569119017 |