Anodic Layer Formation on the InAlAs Surface in Townsend Gas-Discharge Plasma Full article
Journal |
Materials Science in Semiconductor Processing
ISSN: 1369-8001 , E-ISSN: 1873-4081 |
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Output data | Year: 2019, Volume: 102, Article number : 104611, Pages count : 5 DOI: 10.1016/j.mssp.2019.104611 | ||||||
Tags | Alumina; Aluminum oxide; Anodic oxidation; Electric discharges; Indium compounds; Morphology; Plasma theory; Surface morphology | ||||||
Authors |
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Affiliations |
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Funding (2)
1 | Russian Foundation for Basic Research | 18-32-00548 (АААА-А18-118032890099-8) |
2 | Federal Agency for Scientific Organizations | 0306-2016-0012 (АААА-А17-117042110149-1) |
Abstract:
The study of the InAlAs surface oxidation process in the Townsend gas-discharge plasma of gas-mixture Ar, O2, CF4 at room temperature was performed. The anodic layer thickness distribution, the morphology of InAlAs surface and anodic layer/InAlAs interface, as well as the layer chemical composition, were investigated by scanning ellipsometry, AFM, HREM and XPS methods. It was shown that the presented oxidation technique provides a controlled formation of non-fluorinated and fluorinated anodic layers on the InAlAs surface with a sharp interface and unchanged surface morphology. The non-fluorinated anodic layer mainly consists of semiconductor element oxides (In2O3, Al2O3, As2O3). The oxidation in the fluorine-containing medium leads to the formation of In, Al and As oxyfluorides. © 2019
Cite:
Aksenov M.S.
, Gutakovskii A.K.
, Prosvirin I.P.
, Dmitriev D.V.
, Nedomolkina A.A.
, Valisheva N.A.
Anodic Layer Formation on the InAlAs Surface in Townsend Gas-Discharge Plasma
Materials Science in Semiconductor Processing. 2019. V.102. 104611 :1-5. DOI: 10.1016/j.mssp.2019.104611 WOS Scopus РИНЦ
Anodic Layer Formation on the InAlAs Surface in Townsend Gas-Discharge Plasma
Materials Science in Semiconductor Processing. 2019. V.102. 104611 :1-5. DOI: 10.1016/j.mssp.2019.104611 WOS Scopus РИНЦ
Dates:
Submitted: | Mar 11, 2019 |
Accepted: | Jul 5, 2019 |
Published online: | Jul 10, 2019 |
Published print: | Nov 1, 2019 |
Identifiers:
Web of science | WOS:000477637200025 |
Scopus | 2-s2.0-85068503263 |
Elibrary | 41635238 |
Chemical Abstracts | 2019:1369516 |
OpenAlex | W2956263629 |