Interfaces Analysis of the HfO2/SiO2/Si Structure Full article
Journal |
Journal of Physics and Chemistry of Solids
ISSN: 0022-3697 |
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Output data | Year: 2010, Volume: 71, Number: 5, Pages: 836-840 Pages count : 5 DOI: 10.1016/j.jpcs.2010.02.010 | ||||||||
Tags | Chemical properties; Chemical vapor deposition; Hafnium; Silicates; Silicon; Silicon oxides; Spacecraft instruments; Synthesis (chemical); Thin films; X ray photoelectron spectroscopy | ||||||||
Authors |
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Affiliations |
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Funding (1)
1 | Siberian Branch of the Russian Academy of Sciences | 97 |
Abstract:
The physical and chemical properties of the HfO2/SiO2/Si stack have been analyzed using cross-section HR TEM, XPS, IR-spectroscopy and ellipsometry. HfO2 films were deposited by the MO CVD method using as precursors the tetrakis 2,2,6,6 tetramethyl-3,5 heptanedionate hafnium—Hf(dpm)4 and dicyclopentadienil-hafnium-bis-diethylamide—Сp2Hf(N(C2H5)2)2.
The amorphous interface layer (IL) between HfO2 and silicon native oxide has been observed by the HRTEM method. The interface layer comprises hafnium silicate with a smooth varying of chemical composition through the IL thickness. The interface layer formation occurs both during HfO2 synthesis, and at the annealing of the HfO2/SiO2/Si stack. It was concluded from the XPS, and the IR-spectroscopy that the hafnium silicate formation occurs via a solid-state reaction at the HfO2/SiO2 interface, and its chemical structure depends on the thickness of the SiO2 underlayer.
Cite:
Smirnova T.P.
, Yakovkina L.V.
, Beloshapkin S.A.
, Kaichev V.V.
, Alferova N.I.
, Jeong-Hwan S.
Interfaces Analysis of the HfO2/SiO2/Si Structure
Journal of Physics and Chemistry of Solids. 2010. V.71. N5. P.836-840. DOI: 10.1016/j.jpcs.2010.02.010 WOS Scopus РИНЦ
Interfaces Analysis of the HfO2/SiO2/Si Structure
Journal of Physics and Chemistry of Solids. 2010. V.71. N5. P.836-840. DOI: 10.1016/j.jpcs.2010.02.010 WOS Scopus РИНЦ
Dates:
Submitted: | May 20, 2009 |
Accepted: | Feb 18, 2010 |
Published online: | Mar 4, 2010 |
Published print: | May 1, 2010 |
Identifiers:
Web of science | WOS:000277548000021 |
Scopus | 2-s2.0-77950337811 |
Elibrary | 15315361 |
Chemical Abstracts | 2010:450758 |
Chemical Abstracts (print) | 154:501204 |
OpenAlex | W2018378182 |