Formation of Thin Nanostructured Layers during Heterogeneous Gas-Phase Synthesis from Small-Size Volatile Metal Complexes on the Surface of Semiconductors and Dielectrics Full article
Journal |
Technical Physics Letters
ISSN: 1063-7850 , E-ISSN: 1090-6533 |
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Output data | Year: 2010, Volume: 36, Number: 3, Pages: 265-268 Pages count : 4 DOI: 10.1134/S1063785010030193 | ||||||
Tags | Technical Physic Letter; Metal Layer; Copper Layer; Silica Substrate; Reactant Precursor | ||||||
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Abstract:
We have developed and verified a new method for the formation of thin nanostructured layers on semiconductor and dielectric substrates by heterogeneous gas-phase synthesis from small-sized volatile metal complexes. Thin nanostructured layers of copper on silicon and silica substrates were successfully formed from small-sized volatile formiate metal complexes using a combined synthesis-transfer process. It is established that copper in the layers deposited by this method predominantly occurs in the metallic (Cu0) state in nanosized grains with a characteristic close-packed structure.
Cite:
Badalyan A.M.
, Bakhturova L.F.
, Kaichev V.V.
, Kashnikov B.P.
, Polyakov O.V.
, Pchelyakov O.P.
, Smirnov G.I.
Formation of Thin Nanostructured Layers during Heterogeneous Gas-Phase Synthesis from Small-Size Volatile Metal Complexes on the Surface of Semiconductors and Dielectrics
Technical Physics Letters. 2010. V.36. N3. P.265-268. DOI: 10.1134/S1063785010030193 WOS Scopus РИНЦ
Formation of Thin Nanostructured Layers during Heterogeneous Gas-Phase Synthesis from Small-Size Volatile Metal Complexes on the Surface of Semiconductors and Dielectrics
Technical Physics Letters. 2010. V.36. N3. P.265-268. DOI: 10.1134/S1063785010030193 WOS Scopus РИНЦ
ArticleLinkType.TRANSLATED_TO_ORIGINAL:
Бадалян А.М.
, Бахтурова Л.Ф.
, Каичев В.В.
, Кашников Б.П.
, Поляков О.В.
, Пчеляков О.П.
, Смирнов Г.И.
Формирование наноструктурированных тонких слоев при их газогетерогенном синтезе из малоразмерных летучих металлокомплексов на поверхности полупроводников и диэлектриков
Письма в Журнал технической физики. 2010. Т.36. №6. С.36-45. РИНЦ
Формирование наноструктурированных тонких слоев при их газогетерогенном синтезе из малоразмерных летучих металлокомплексов на поверхности полупроводников и диэлектриков
Письма в Журнал технической физики. 2010. Т.36. №6. С.36-45. РИНЦ
Dates:
Submitted: | Oct 21, 2009 |
Published print: | Mar 1, 2010 |
Published online: | Apr 9, 2010 |
Identifiers:
Web of science | WOS:000276480400019 |
Scopus | 2-s2.0-77952041830 |
Elibrary | 15321286 |
Chemical Abstracts | 2010:434277 |
Chemical Abstracts (print) | 154:248163 |
OpenAlex | W2053237734 |