EXAFS, XANES and XRD Investigations of Doped ZnS Nanostructures.
R.G. Valeev, A.N. Beltiukov, A.I. Chukavin, A.L. Trigub, V.V. Kriventsov, N.A. Mezentsev. EXAFS, XANES and XRD investigations of doped ZnS nanostructures.
The International Conference "Synchrotron and Free electron laser Radiation: generation and application" (SFR-2016) – Novosibirsk, 04 - 07 Jul 2016.
In the current state of materials science the considerable attention has devoted to the study of new materials for light emitting devices. Light emitting electroluminescent panels based on powders and thin films have found wide application in electroluminescent devices, character displays, backlight panels of advertising constructions. One major drawback of such devices is using high frequency and high voltage AC power sources. Traditional materials for electroluminescent light sources are powders and films of zinc sulfide doped with copper, chlorine, manganese and other elements. It was established that a wavelength and intensity of light depends on the concentration and type of dopands, i.e. there are circumstances under which it is possible to provide a source of white light emission. But along with the advantages of electroluminescent light sources, there are significant disadvantages: high energy consumption, the need for specific power supplies and short operation time. This is due to degradation of the active layer under specific principles of operation of such devices in extremely high electric fields (before breakdown luminescence). In this work we use templating approaches based on the formation of doped ZnS particles in the porous alumina membranes with highly ordered channels with controlled diameter. It is necessary to identify the influence of synthesis conditions on the structure and electrical properies, (including light emitting), properties of materials. All this defines the scope of application of SR methods. EXAFS, XANES and XRD, as powerful probe instruments in investigations of doped ZnS nanostructures for the creation of a new class of fluorescent materials to form the basis of their layers for high-performance and high-brightness light-emitting electroluminescent panels. Some changes of the phase compositions and local structure arrangements of the studied ZnS doped samples (different compositions and preparation ways) were characterized in detail. The interatomic distances and corresponded coordination numbers were revealed. All possible structural models were discussed. Some correlations between their properties, local structure distortions and state of doped components were established.