Atomic and Electronic Structures of Amorphous ZrO2 and HfO2 Films Научная публикация
Конференция |
2nd International Symposium on Nano- and Giga-Challenges in Microelectronics 12-17 сент. 2004 , Krakow |
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Журнал |
Microelectronic Engineering
ISSN: 0167-9317 , E-ISSN: 1873-5568 |
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Вых. Данные | Год: 2005, Том: 81, Номер: 2-4, Страницы: 524-529 Страниц : 6 DOI: 10.1016/j.mee.2005.03.056 | ||||||||||||
Ключевые слова | Atomic structure, Charge transport, Electronic structure, High-k dielectric | ||||||||||||
Авторы |
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Организации |
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Информация о финансировании (2)
1 | Сибирское отделение Российской академии наук | 116 |
2 | City University of Hong Kong | 9040807 CityU1167/03E |
Реферат:
Atomic and electronic structures of ZrO2 and HfO2 films deposited using sputtering technique were studied by X-ray diffraction (XRD), EXAFS spectroscopy, photoemission (with X-ray and ultraviolet excitation sources) and electron energy loss spectroscopy (EELS). XRD results indicated that the as-deposited films were amorphous and a monoclinic phase was detected after annealing them in ambient at 800 °C. Photoemission results indicated that the ZrO2 valence band consists of two bands separated by an ionic gap of 6 eV. The lower band of 10 eV width is occupied mainly by O 2s states. EELS results indicated that the bandgap of ZrO2 and HfO2 films are 4.7 and 5.7 eV, respectively.
Библиографическая ссылка:
Gritsenko V.
, Gritsenko D.
, Shaimeev S.
, Aliev V.
, Nasyrov K.
, Erenburg S.
, Tapilin V.
, Wong H.
, Poon M.C.
, Lee J.H.
, Lee J.-W.
, Kim C.W.
Atomic and Electronic Structures of Amorphous ZrO2 and HfO2 Films
Microelectronic Engineering. 2005. V.81. N2-4. P.524-529. DOI: 10.1016/j.mee.2005.03.056 WOS Scopus РИНЦ
Atomic and Electronic Structures of Amorphous ZrO2 and HfO2 Films
Microelectronic Engineering. 2005. V.81. N2-4. P.524-529. DOI: 10.1016/j.mee.2005.03.056 WOS Scopus РИНЦ
Даты:
Опубликована online: | 7 апр. 2005 г. |
Опубликована в печати: | 1 авг. 2005 г. |
Идентификаторы БД:
Web of science | WOS:000231964900054 |
Scopus | 2-s2.0-23444458761 |
РИНЦ | 13492300 |
Chemical Abstracts | 2005:733450 |
Chemical Abstracts (print) | 144:264300 |
OpenAlex | W2045408514 |