Two Fold Coordinated Silicon Atom: A Hole Trap in SiO2 Научная публикация
Журнал |
Solid State Communications
ISSN: 0038-1098 , E-ISSN: 1879-2766 |
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Вых. Данные | Год: 2002, Том: 121, Номер: 6-7, Страницы: 301-304 Страниц : 4 DOI: 10.1016/S0038-1098(02)00022-4 | ||||||
Ключевые слова | A. Semiconductors, C. Point defects, D. Recombination and trapping, D. Tunnelling | ||||||
Авторы |
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Организации |
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Информация о финансировании (1)
1 | International Association for the Promotion of Co-operation with Scientists from the New Independent States of the Former Soviet Union | 97-0347 |
Реферат:
The capturing properties of a neutral diamagnetic two fold coordinated silicon atom with two paired electrons (silylene center =Si:) in SiO2 are studied with ab initio density functional method. We prove that this defect is a hole trap in SiO2. Hole capture results in creation of a paramagnetic two-fold coordinated silicon atom with unpaired electron =Siradical dot(+). According to this prediction silylene centers can be with silicon-silicon bonds responsible for the positive charge accumulation in MOS devices at ionising radiation.
Библиографическая ссылка:
Gritsenko V.A.
, Shaposhnikov A.V.
, Zhidomirov G.M.
, Roger M.
Two Fold Coordinated Silicon Atom: A Hole Trap in SiO2
Solid State Communications. 2002. V.121. N6-7. P.301-304. DOI: 10.1016/S0038-1098(02)00022-4 WOS Scopus РИНЦ
Two Fold Coordinated Silicon Atom: A Hole Trap in SiO2
Solid State Communications. 2002. V.121. N6-7. P.301-304. DOI: 10.1016/S0038-1098(02)00022-4 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 13 дек. 2001 г. |
Принята к публикации: | 7 янв. 2002 г. |
Опубликована online: | 13 янв. 2002 г. |
Опубликована в печати: | 22 февр. 2002 г. |
Идентификаторы БД:
Web of science | WOS:000174600000003 |
Scopus | 2-s2.0-0037154707 |
РИНЦ | 13407311 |
Chemical Abstracts | 2002:136773 |
Chemical Abstracts (print) | 136:287083 |
OpenAlex | W1977899278 |