Plasma-Chemical Deposition of SiCN Films from Volatile N-Bromhexamethyldisilazane Научная публикация
Журнал |
Inorganic Materials
ISSN: 0020-1685 , E-ISSN: 1608-3172 |
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Вых. Данные | Год: 2008, Том: 44, Номер: 12, Страницы: 1312-1318 Страниц : 7 DOI: 10.1134/S0020168508120091 | ||||||
Ключевые слова | Silicon Carbonitride; Silyl Derivative; Remote Plasma; Carbon Nitride Film; Indentor Penetration Depth | ||||||
Авторы |
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Организации |
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Реферат:
Process of silicon-carbonitride (SiCN) film production from a new volatile organosilicon,
N-bromhexamethyldisilazane, is developed. The use of this chemical comprising the relatively week N–Br bond makes
it possible to increase the film growth velocity in the plasma-chemical process with remote plasma in comparison
with the processed in which hexamethyldisilazane and hexamethylcyclotrisilazane are used. The chemical
composition of the films is determined using a complex of spectroscopic methods. It is found that inorganic
SiCN films containing Si–N, Si–C, and C–N bonds are deposited at temperatures 570–870 K. The C–N bonds
are formed already at a temperature of about 470 K. It is shown that the use of this volatile organosilicon material
makes it possible to synthesize silicon carbonitrides with various ratios of the Si–C, Si–C, and C–N bonds.
This enriches the possibilities of producing films and coatings with various functional parameters. The nanohardness
of 100-nm films prepared at T > 770 K is 17 GPa.
Библиографическая ссылка:
Smirnova T.P.
, Badalyan A.M.
, Borisov V.O.
, Bakhturova L.F.
, Kaichev V.V.
, Podgorbunskaya T.A.
, Rakhlin V.I.
Plasma-Chemical Deposition of SiCN Films from Volatile N-Bromhexamethyldisilazane
Inorganic Materials. 2008. V.44. N12. P.1312-1318. DOI: 10.1134/S0020168508120091 WOS Scopus РИНЦ
Plasma-Chemical Deposition of SiCN Films from Volatile N-Bromhexamethyldisilazane
Inorganic Materials. 2008. V.44. N12. P.1312-1318. DOI: 10.1134/S0020168508120091 WOS Scopus РИНЦ
Оригинальная:
Смирнова Т.П.
, Бадалян А.М.
, Борисов В.О.
, Бахтурова Л.Ф.
, Каичев В.В.
, Подгорбунская Т.А.
, Рахлин В.И.
Плазмохимическое осаждение пленок SiCN из летучего N-бромгексаметилдисилазана
Неорганические материалы. 2008. Т.44. №12. С.1453-1460. РИНЦ
Плазмохимическое осаждение пленок SiCN из летучего N-бромгексаметилдисилазана
Неорганические материалы. 2008. Т.44. №12. С.1453-1460. РИНЦ
Даты:
Поступила в редакцию: | 1 нояб. 2007 г. |
Опубликована в печати: | 1 дек. 2008 г. |
Опубликована online: | 7 дек. 2008 г. |
Идентификаторы БД:
Web of science | WOS:000261591500009 |
Scopus | 2-s2.0-57849126376 |
РИНЦ | 13593782 |
Chemical Abstracts | 2008:1474885 |
Chemical Abstracts (print) | 150:380620 |
OpenAlex | W2031229731 |