Barrier Characteristics and Interface Properties of Au/Ti/n-InAlAs Schottky Contacts Научная публикация
Журнал |
Materials Science in Semiconductor Processing
ISSN: 1369-8001 , E-ISSN: 1873-4081 |
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Вых. Данные | Год: 2018, Том: 74, Страницы: 193-198 Страниц : 6 DOI: 10.1016/j.mssp.2017.10.014 | ||||||
Ключевые слова | ELECTRON-TRANSPORT; N-TYPE; DIODES | ||||||
Авторы |
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Организации |
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Информация о финансировании (2)
1 | Российский научный фонд | 14-22-00143 |
2 | Российский фонд фундаментальных исследований | 14-29-08124 |
Реферат:
The InAlAs surface morphology (AFM), chemical composition (XPS) and the Ti/InAlAs interface structure (HREM), during the Au/Ti/n-In0.52Al0.48As/InP(001) mesa-structure Schottky barrier formation, were studied. The current-voltage (I-V) dependences analysis of the formed Schottky barrier in the temperature range of 100–380 K was carried out. It was shown that the I-V dependences are well described by the thermionic emission theory at temperatures above 200 K with the ideality factor and the barrier height close to 1.09 and 0.7 eV, respectively. At temperatures below 200 K, the I-V behavior is attributed to the Schottky barrier anomalies, which are explained by the existence of nanometer-sized patches with a low barrier height having a Gaussian distribution (Tung model). According to this model, the temperature dependences of the barrier height and ideality factor were described with the following parameters: the homogeneous barrier height of 0.88 eV and standard deviation of 10−4 cm2/3V1/3. In the analysis of the modified Richardson plot, the Richardson constant (10.7 Acm−2 K−2) and the area fraction (24%), occupied by the patches with a low barrier height and diameter ~80 nm, were calculated. The patches appearance is explained by the presence of the spikes detected on the InAlAs surface by the AFM method.
Библиографическая ссылка:
Chistokhin I.B.
, Aksenov M.S.
, Valisheva N.A.
, Dmitriev D.V.
, Kovchavtsev A.P.
, Gutakovskii A.K.
, Prosvirin I.P.
, Zhuravlev K.S.
Barrier Characteristics and Interface Properties of Au/Ti/n-InAlAs Schottky Contacts
Materials Science in Semiconductor Processing. 2018. V.74. P.193-198. DOI: 10.1016/j.mssp.2017.10.014 WOS Scopus РИНЦ
Barrier Characteristics and Interface Properties of Au/Ti/n-InAlAs Schottky Contacts
Materials Science in Semiconductor Processing. 2018. V.74. P.193-198. DOI: 10.1016/j.mssp.2017.10.014 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 4 июл. 2017 г. |
Принята к публикации: | 12 окт. 2017 г. |
Опубликована online: | 16 нояб. 2017 г. |
Опубликована в печати: | 1 февр. 2018 г. |
Идентификаторы БД:
Web of science | WOS:000415924400027 |
Scopus | 2-s2.0-85032368597 |
РИНЦ | 31155825 |
Chemical Abstracts | 2017:1732797 |
OpenAlex | W2767554051 |