Anodic Layer Formation on the InAlAs Surface in Townsend Gas-Discharge Plasma Научная публикация
Журнал |
Materials Science in Semiconductor Processing
ISSN: 1369-8001 , E-ISSN: 1873-4081 |
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Вых. Данные | Год: 2019, Том: 102, Номер статьи : 104611, Страниц : 5 DOI: 10.1016/j.mssp.2019.104611 | ||||||
Ключевые слова | Alumina; Aluminum oxide; Anodic oxidation; Electric discharges; Indium compounds; Morphology; Plasma theory; Surface morphology | ||||||
Авторы |
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Организации |
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Информация о финансировании (2)
1 | Российский фонд фундаментальных исследований | 18-32-00548 (АААА-А18-118032890099-8) |
2 | Федеральное агентство научных организаций России | 0306-2016-0012 (АААА-А17-117042110149-1) |
Реферат:
The study of the InAlAs surface oxidation process in the Townsend gas-discharge plasma of gas-mixture Ar, O2, CF4 at room temperature was performed. The anodic layer thickness distribution, the morphology of InAlAs surface and anodic layer/InAlAs interface, as well as the layer chemical composition, were investigated by scanning ellipsometry, AFM, HREM and XPS methods. It was shown that the presented oxidation technique provides a controlled formation of non-fluorinated and fluorinated anodic layers on the InAlAs surface with a sharp interface and unchanged surface morphology. The non-fluorinated anodic layer mainly consists of semiconductor element oxides (In2O3, Al2O3, As2O3). The oxidation in the fluorine-containing medium leads to the formation of In, Al and As oxyfluorides. © 2019
Библиографическая ссылка:
Aksenov M.S.
, Gutakovskii A.K.
, Prosvirin I.P.
, Dmitriev D.V.
, Nedomolkina A.A.
, Valisheva N.A.
Anodic Layer Formation on the InAlAs Surface in Townsend Gas-Discharge Plasma
Materials Science in Semiconductor Processing. 2019. V.102. 104611 :1-5. DOI: 10.1016/j.mssp.2019.104611 WOS Scopus РИНЦ
Anodic Layer Formation on the InAlAs Surface in Townsend Gas-Discharge Plasma
Materials Science in Semiconductor Processing. 2019. V.102. 104611 :1-5. DOI: 10.1016/j.mssp.2019.104611 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 11 мар. 2019 г. |
Принята к публикации: | 5 июл. 2019 г. |
Опубликована online: | 10 июл. 2019 г. |
Опубликована в печати: | 1 нояб. 2019 г. |
Идентификаторы БД:
Web of science | WOS:000477637200025 |
Scopus | 2-s2.0-85068503263 |
РИНЦ | 41635238 |
Chemical Abstracts | 2019:1369516 |
OpenAlex | W2956263629 |