1
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Novikov Y.N.
, Gismatulin A.A.
, Prosvirin I.P.
, Bobovnikov P.G.
, Krasnikov G.Y.
, Gritsenko V.A.
Short-Range Order and Charge Transport in Silicon-Rich Pyrolytic Silicon Oxynitride
Journal of Non-Crystalline Solids. 2023.
V.599. 121984
:1-7. DOI: 10.1016/j.jnoncrysol.2022.121984
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РИНЦ
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2
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Novikov Y.N.
, Kamaev G.N.
, Prosvirin I.P.
, Gritsenko V.A.
Memory Properties and Short-Range Order in Silicon Oxynitride-Based Memristors
Applied Physics Letters. 2023.
V.122. 232903
:1-5. DOI: 10.1063/5.0151211
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3
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Gismatulin A.A.
, Voronkovskii V.A.
, Kamaev G.N.
, Novikov Y.N.
, Kruchinin V.N.
, Krivyakin G.K.
, Gritsenko V.A.
, Prosvirin I.P.
, Chin A.
Electronic Structure and Charge Transport Mechanism in a Forming-Free SiOx-Based Memristor
Nanotechnology. 2020.
V.31. N50. 505704
:1-10. DOI: 10.1088/1361-6528/abb505
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4
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Gritsenko V.A.
, Kruchinin V.N.
, Prosvirin I.P.
, Novikov Y.N.
, Chin A.
, Volodin V.A.
Atomic and Electronic Structures of a-SiNx:H
Journal of Experimental and Theoretical Physics. 2019.
V.129. N5. P.924-934. DOI: 10.1134/S1063776119080132
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5
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Гриценко В.А.
, Кручинин В.Н.
, Просвирин И.П.
, Новиков Ю.Н.
, Чин А.
, Володин В.А.
Строение и электронная структура a-SiNx:H
Журнал экспериментальной и теоретической физики. 2019.
Т.156. №5(11). С.1003-1015. DOI: 10.1134/s0044451019110166
РИНЦ
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6
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Perevalov T.V.
, Volodin V.A.
, Novikov Y.N.
, Kamaev G.N.
, Gritsenko V.A.
, Prosvirin I.P.
Nanosized Potential Fluctuations in SiOx Synthesized by Plasma-Enhanced Chemical Vapor Deposition
Physics of the Solid State. 2019.
V.61. N12. P.2560-2568. DOI: 10.1134/s1063783419120370
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7
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Перевалов Т.В.
, Володин В.А.
, Новиков Ю.Н.
, Камаев Г.Н.
, Гриценко В.А.
, Просвирин И.П.
Наноразмерные флуктуации потенциала в SiOx, синтезированном плазмохимическим осаждением
Физика твердого тела. 2019.
Т.61. №12. С.2528–2535. DOI: 10.21883/FTT.2019.12.48589.552
РИНЦ
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8
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Gritsenko V.A.
, Novikov Y.N.
, Perevalov T.V.
, Kruchinin V.N.
, Aliev V.S.
, Gerasimova A.K.
, Erenburg S.B.
, Trubina S.V.
, Kvashnina K.O.
, Prosvirin I.P.
, Lanza M.
Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization
Advanced Electronic Materials. 2018.
1700592
:1-8. DOI: 10.1002/aelm.201700592
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РИНЦ
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9
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Gritsenko V.A.
, Novikov Y.N.
, Shaposhnikov A.V.
, Wong H.
, Zhidomirov G.M.
Capturing Properties of Three-Fold Coordinated Silicon Atom in Silicon Nitride: A Positive Correlation Energy Model
Физика твердого тела. 2003.
V.45. N11. P.1934-1937.
РИНЦ
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10
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Gritsenko V.A.
, Novikov Y.N.
, Shaposhnikov A.V.
, Wong H.
, Zhidomirov G.M.
Capturing Properties of a Threefold Coordinated Silicon Atom in Silicon Nitride: Positive Correlation Energy Model
Physics of the Solid State. 2003.
V.45. N11. P.2031-2035. DOI: 10.1134/1.1626733
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11
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Gritsenko V.A.
, Shaposhnikov A.V.
, Novikov Y.N.
, Baraban A.P.
, Wong H.
, Zhidomirov G.M.
, Roger M.
Onefold Coordinated Oxygen Atom: An Electron Trap in the Silicon Oxide
Microelectronics Reliability. 2003.
V.43. N4. P.665-669. DOI: 10.1016/S0026-2714(03)00030-1
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РИНЦ
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