|
1
|
Voronkovskii V.A.
,
Aliev V.S.
,
Gerasimova A.K.
,
Perevalov T.V.
,
Prosvirin I.P.
,
Islamov D.R.
Influence of the Active TaN/ZrOx/Ni Memristor Layer Oxygen Content on Forming and Resistive Switching Behavior
Nanotechnology. 2021.
V.32. N18. 185205
:1-19. DOI: 10.1088/1361-6528/abce7b
WOS
Scopus
РИНЦ
|
|
2
|
Voronkovskii V.A.
,
Perevalov T.V.
,
Iskhakzay R.M.H.
,
Aliev V.S.
,
Gritsenko V.A.
,
Prosvirin I.P.
Phonon-Assisted Electron Tunneling between Traps in Silicon Oxide Films Treated in Hydrogen Plasma
Journal of Non-Crystalline Solids. 2020.
V.546. 120256
:1-5. DOI: 10.1016/j.jnoncrysol.2020.120256
WOS
Scopus
РИНЦ
|
|
3
|
Gismatulin A.A.
,
Voronkovskii V.A.
,
Kamaev G.N.
,
Novikov Y.N.
,
Kruchinin V.N.
,
Krivyakin G.K.
,
Gritsenko V.A.
,
Prosvirin I.P.
,
Chin A.
Electronic Structure and Charge Transport Mechanism in a Forming-Free SiOx-Based Memristor
Nanotechnology. 2020.
V.31. N50. 505704
:1-10. DOI: 10.1088/1361-6528/abb505
WOS
Scopus
РИНЦ
|
|
4
|
Gritsenko V.A.
,
Perevalov T.V.
,
Voronkovskii V.A.
,
Gismatulin A.A.
,
Kruchinin V.N.
,
Aliev V.S.
,
Pustovarov V.A.
,
Prosvirin I.P.
,
Roizin Y.
Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide
ACS Applied Materials and Interfaces. 2018.
V.10. N4. P.3769-3775. DOI: 10.1021/acsami.7b16753
WOS
Scopus
РИНЦ
|
|
5
|
Perevalov T.V.
,
Gritsenko V.A.
,
Gismatulin A.A.
,
Voronkovskii V.A.
,
Gerasimova A.K.
,
Aliev V.S.
,
Prosvirin I.A.
Electronic Structure and Charge Transport in Nonstoichiometric Tantalum Oxide
Nanotechnology. 2018.
V.29. N26. 264001
:1-9. DOI: 10.1088/1361-6528/aaba4c
WOS
Scopus
РИНЦ
|