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1
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Gritsenko V.A.
,
Kruchinin V.N.
,
Prosvirin I.P.
,
Novikov Y.N.
,
Chin A.
,
Volodin V.A.
Atomic and Electronic Structures of a-SiNx:H
Journal of Experimental and Theoretical Physics. 2019.
V.129. N5. P.924-934. DOI: 10.1134/S1063776119080132
Scopus
WOS
AN: 2019:2469622
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2
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Гриценко В.А.
,
Кручинин В.Н.
,
Просвирин И.П.
,
Новиков Ю.Н.
,
Чин А.
,
Володин В.А.
Строение и электронная структура a-SiNx:H
Журнал экспериментальной и теоретической физики. 2019.
Т.156. №5(11). С.1003-1015. DOI: 10.1134/s0044451019110166
РИНЦ
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3
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Gritsenko V.A.
,
Novikov Y.N.
,
Perevalov T.V.
,
Kruchinin V.N.
,
Aliev V.S.
,
Gerasimova A.K.
,
Erenburg S.B.
,
Trubina S.V.
,
Kvashnina K.O.
,
Prosvirin I.P.
,
Lanza M.
Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization
Advanced Electronic Materials. 2018.
1700592
:1-8. DOI: 10.1002/aelm.201700592
WOS
Scopus
РИНЦ
AN: 2018:1320605
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4
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Gritsenko V.A.
,
Novikov Y.N.
,
Shaposhnikov A.V.
,
Wong H.
,
Zhidomirov G.M.
Capturing Properties of Three-Fold Coordinated Silicon Atom in Silicon Nitride: A Positive Correlation Energy Model
Физика твердого тела. 2003.
V.45. N11. P.1934-1937.
РИНЦ
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5
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Gritsenko V.A.
,
Novikov Y.N.
,
Shaposhnikov A.V.
,
Wong H.
,
Zhidomirov G.M.
Capturing Properties of a Threefold Coordinated Silicon Atom in Silicon Nitride: Positive Correlation Energy Model
Physics of the Solid State. 2003.
V.45. N11. P.2031-2035. DOI: 10.1134/1.1626733
WOS
Scopus
РИНЦ
AN: 2003:896620
CAN: 140:187802
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6
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Gritsenko V.A.
,
Shaposhnikov A.V.
,
Novikov Y.N.
,
Baraban A.P.
,
Wong H.
,
Zhidomirov G.M.
,
Roger M.
Onefold Coordinated Oxygen Atom: An Electron Trap in the Silicon Oxide
Microelectronics Reliability. 2003.
V.43. N4. P.665-669. DOI: 10.1016/S0026-2714(03)00030-1
WOS
Scopus
РИНЦ
AN: 2003:380541
CAN: 140:102658
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