SciAct
Toggle navigation
  • EN
  • RU

Sections:

  • Articles
  • Books
  • Conference attendances
  • Conference theses
  • Patents

Atomic and Electronic Structures of Amorphous ZrO2 and HfO 2 Films Full article

Общее Language: Английский, Genre: Full article,
Status: Published, Source type: Original
Conference 2nd International Symposium on Nano- and Giga-Challenges in Microelectronics
12-17 Sep 2004 , Krakow
Journal Microelectronic Engineering
ISSN: 0167-9317 , E-ISSN: 1873-5568
Output data Year: 2005, Volume: 81, Number: 2-4, Pages: 524-529 Pages count : 6 DOI: 10.1016/j.mee.2005.03.056
Tags Atomic structure, Charge transport, Electronic structure, High-k dielectric
Authors Gritsenko Vladimir 1 , Gritsenko Daryja 1 , Shaimeev Sergei 1 , Aliev Vladimir 1 , Nasyrov Kamil 1 , Erenburg Simon 2 , Tapilin Vladimir 3 , Wong Hei 4 , Poon M.C. 5 , Lee J.H. 6 , Lee J.-W. 6 , Kim C.W. 6
Affiliations
1 Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
2 Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia
3 Institute of Catalysis, 630090 Novosibirsk, Russia
4 Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
5 Department of Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
6 Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea

Funding (2)

1 Президиум СО РАН 116
2 City University of Hong Kong 9040807 CityU1167/03E

Abstract: Atomic and electronic structures of ZrO2 and HfO2 films deposited using sputtering technique were studied by X-ray diffraction (XRD), EXAFS spectroscopy, photoemission (with X-ray and ultraviolet excitation sources) and electron energy loss spectroscopy (EELS). XRD results indicated that the as-deposited films were amorphous and a monoclinic phase was detected after annealing them in ambient at 800 °C. Photoemission results indicated that the ZrO2 valence band consists of two bands separated by an ionic gap of 6 eV. The lower band of 10 eV width is occupied mainly by O 2s states. EELS results indicated that the bandgap of ZrO2 and HfO2 films are 4.7 and 5.7 eV, respectively.
Cite: Gritsenko V. , Gritsenko D. , Shaimeev S. , Aliev V. , Nasyrov K. , Erenburg S. , Tapilin V. , Wong H. , Poon M.C. , Lee J.H. , Lee J.-W. , Kim C.W.
Atomic and Electronic Structures of Amorphous ZrO2 and HfO 2 Films
Microelectronic Engineering. 2005. V.81. N2-4. P.524-529. DOI: 10.1016/j.mee.2005.03.056 publication_identifier_short.wos_identifier_type publication_identifier_short.scopus_identifier_type publication_identifier_short.rinz_identifier_type
Dates:
Published online: Apr 7, 2005
Published print: Aug 1, 2005
Identifiers:
publication_identifier.wos_identifier_type WOS:000231964900054
publication_identifier.scopus_identifier_type 2-s2.0-23444458761
publication_identifier.rinz_identifier_type 13492300
publication_identifier.accession_number_identifier_type 2005:733450
publication_identifier.chemical_accession_number_identifier_type 144:264300
Altmetrics: