Atomic and Electronic Structures of Amorphous ZrO2 and HfO 2 Films
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Original
|
| Conference |
2nd International Symposium on Nano- and Giga-Challenges in Microelectronics
12-17 Sep 2004
,
Krakow
|
| Journal |
Microelectronic Engineering
ISSN: 0167-9317
, E-ISSN: 1873-5568
|
| Output data |
Year: 2005,
Volume: 81,
Number: 2-4,
Pages: 524-529
Pages count
: 6
DOI:
10.1016/j.mee.2005.03.056
|
| Tags |
Atomic structure, Charge transport, Electronic structure, High-k dielectric |
| Authors |
Gritsenko Vladimir
1
,
Gritsenko Daryja
1
,
Shaimeev Sergei
1
,
Aliev Vladimir
1
,
Nasyrov Kamil
1
,
Erenburg Simon
2
,
Tapilin Vladimir
3
,
Wong Hei
4
,
Poon M.C.
5
,
Lee J.H.
6
,
Lee J.-W.
6
,
Kim C.W.
6
|
| Affiliations |
| 1 |
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
|
| 2 |
Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia
|
| 3 |
Institute of Catalysis, 630090 Novosibirsk, Russia
|
| 4 |
Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
|
| 5 |
Department of Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
|
| 6 |
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
|
|
Funding (2)
|
1
|
Президиум СО РАН
|
116
|
|
2
|
City University of Hong Kong
|
9040807 CityU1167/03E
|
Atomic and electronic structures of ZrO2 and HfO2 films deposited using sputtering technique were studied by X-ray diffraction (XRD), EXAFS spectroscopy, photoemission (with X-ray and ultraviolet excitation sources) and electron energy loss spectroscopy (EELS). XRD results indicated that the as-deposited films were amorphous and a monoclinic phase was detected after annealing them in ambient at 800 °C. Photoemission results indicated that the ZrO2 valence band consists of two bands separated by an ionic gap of 6 eV. The lower band of 10 eV width is occupied mainly by O 2s states. EELS results indicated that the bandgap of ZrO2 and HfO2 films are 4.7 and 5.7 eV, respectively.