Adsorption Dependence of Vacant-Electronic-State Densities: As Adatom on a Lanthanum Oxide Surface
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Original
|
| Journal |
Physical Review B: Condensed Matter (1978-1997)
ISSN: 0163-1829
|
| Output data |
Year: 1992,
Volume: 46,
Number: 10,
Pages: 6553-6559
Pages count
: 7
DOI:
10.1103/PhysRevB.46.6553
|
| Tags |
X-RAY-ABSORPTION; INTERFACE FORMATION; SUPERCONDUCTORS; YBa2Cu3O6.9; DISRUPTION; ALPHA |
| Authors |
Avramov Pavel V.
1
,
Ruzankin Sergey Ph.
2
,
Zhidomirov Georgy M.
2
|
| Affiliations |
| 1 |
Institute of Chemistry and Chemical Technology of the Russian Academy of Sciences, 660049 Krasnoyarsk, Russia
|
| 2 |
Institute of Catalysis, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia
|
|
Funding (2)
|
1
|
Government of the Russian Federation
|
90214
|
|
2
|
International Science Foundation
|
|
The electronic structure of the lanthanum oxide surface with an adsorbed As atom has been studied by the Xα method. Analysis of the occupied electronic density of states and contour maps of the valence-electronic charge density for the bulk and adsorbed surface clusters shows pronounced differences connected with As p– and La s+La d–state hybridization. The influence of these factors on absorption-spectra features is discussed. The surface reduction effects are considered.