Boron Nitride Films Prepared by Remote Plasma-Enhanced Chemical Vapour Deposition from Borazine (B3N3H6)
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Original
|
| Journal |
Thin Solid Films
ISSN: 0040-6090
|
| Output data |
Year: 1994,
Volume: 237,
Number: 1-2,
Pages: 32-37
Pages count
: 6
DOI:
10.1016/0040-6090(94)90235-6
|
| Authors |
Smirnova T.P.
1
,
Jakovkina L.V.
1
,
Jashkin I.L.
1
,
Sysoeva N.P.
1
,
Amosov Ju.I.
1
|
| Affiliations |
| 1 |
Institute of Inorganic Chemistry of Siberian Department of Russian Academy of Science
|
|
The quality of boron nitride thin films prepared by remote plasma-enhanced chemical vapour deposition, using borazine as a precursor substance, have been analysed based on IR spectra. The process for the film deposition consists of a noble gas or nitrogen excitation in an r.f. plasma; transport of the excited gas out of the plasma region; mixing of it with the neutral molecules of borazine out of the plasma region to form precursor species; and a reaction at a heated substrate to form the films. It was shown that the use of different r.f. excited gases leads to qualitatively different local bonding in the deposited films. An empirical equation to describe the growth velocity of a film was obtained.