Spectroscopic Ellipsometry Characterization of the Optical Properties and Thermal Stability of Zr O2 Films Made by Ion-Beam Assisted Deposition
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Original
|
| Journal |
Applied Physics Letters
ISSN: 0003-6951
, E-ISSN: 1077-3118
|
| Output data |
Year: 2008,
Volume: 92,
Number: 1,
Pages: 011917
Pages count
: 3
DOI:
10.1063/1.2811955
|
| Authors |
Ramana C.V.
1,2
,
Utsunomiya S.
1
,
Ewing R.
1
,
Becker U.
1
,
Atuchin V.V.
3
,
Aliev V.S.
3
,
Kruchinin V.N.
4
|
| Affiliations |
| 1 |
Department of Geological Sciences, University of Michigan, Ann Arbor, Michigan 48109, USA
|
| 2 |
Department of Metallurgical and Materials Engineering, University of Texas, El Paso, Texas 79968, USA
|
| 3 |
Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090, Russia
|
| 4 |
Institute of Catalysis, SB RAS, Novosibirsk 90, 630090, Russia
|
|
Funding (1)
|
1
|
National Science Foundation
|
NSF-NIRT, EAR-0403732
|
The optical properties, interface structure, and thermal stability of the ZrO2 films grown on Si(100) were investigated in detail. A 2 nm thick interfacial layer (IL) is formed at the ZrO2–Si interface for the as-grown ZrO2. The optical constants of ZrO2 films and IL correspond to amorphous-ZrO2 and amorphous-SiO2, respectively. The oxidation and IL growth at 900 °C, as a function of annealing time, exhibit a two-step behavior with a slow and a fast growth-rate zones. The transition from a zone of slow to fast rate is attributed to structurally modified ZrO2 facilitating the faster oxygen transport to the ZrO2 /Si interface.