Plasma-Chemical Deposition of SiCN Films from Volatile N-Bromhexamethyldisilazane
, E-ISSN: 1608-3172
Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090 Russia
Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 5, Novosibirsk, 630090 Russia
Favorskii Institute of Chemistry, Siberian Branch, Russian Academy of Sciences, ul Favorskogo 1, Irkutsk, 664033 Russia
Process of silicon-carbonitride (SiCN) film production from a new volatile organosilicon, N-bromhexamethyldisilazane,
is developed. The use of this chemical comprising the relatively week N–Br bond makes
it possible to increase the film growth velocity in the plasma-chemical process with remote plasma in comparison
with the processed in which hexamethyldisilazane and hexamethylcyclotrisilazane are used. The chemical
composition of the films is determined using a complex of spectroscopic methods. It is found that inorganic
SiCN films containing Si–N, Si–C, and C–N bonds are deposited at temperatures 570–870 K. The C–N bonds
are formed already at a temperature of about 470 K. It is shown that the use of this volatile organosilicon material
makes it possible to synthesize silicon carbonitrides with various ratios of the Si–C, Si–C, and C–N bonds.
This enriches the possibilities of producing films and coatings with various functional parameters. The nanohardness
of 100-nm films prepared at T > 770 K is 17 GPa.