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Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots Full article

Общее Language: Английский, Genre: Full article,
Status: Published, Source type: Translated
Journal Journal of Experimental and Theoretical Physics Letters (JETP Letters)
ISSN: 0021-3640 , E-ISSN: 1090-6487
Output data Year: 2014, Volume: 99, Number: 2, Pages: 76-81 Pages count : 6 DOI: 10.1134/S0021364014020027
Authors Abramkin D.S. 1 , Shamirzaev V.T. 2 , Putyuto M.A. 1 , Gutakovskii A.K. 1 , Shamirzaev T.S. 1,3
Affiliations
1 Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
2 Novosibirsk State Technical University, Novosibirsk, 630092 Russia
3 Novosibirsk State University, Novosibirsk, 630090 Russia

Funding (6)

1 Russian Foundation for Basic Research 13-02-00073 (01201357796)
2 Russian Foundation for Basic Research 14-02-00033 (01201375890)
3 Russian Foundation for Basic Research 14-02-31102 (01201450633)
4 The Ministry of Education and Science of the Russian Federation 16.552.11.7091
5 Council for Grants of the President of the Russian Federation СП-985.2013.5
6 Dynasty Foundation

Abstract: Band alignment of heterostructures with pseudomorphic GaSb1 − x P x /GaP self-assembled quantum dots (SAQDs) lying on a wetting layer was studied. Coexistence of type-I and type-II band alignment was found within the same heterostructure. Wetting layer has band alignment of type-I with the lowest electronic state belonging to the X XY valley of GaSb1 − x P x conduction band, in contrast to SAQDs, which have band alignment of type-II, independently of the ternary alloy composition x. It is shown that type-I-type-II transition is a result of GaP matrix deformation around the SAQD.
Cite: Abramkin D.S. , Shamirzaev V.T. , Putyuto M.A. , Gutakovskii A.K. , Shamirzaev T.S.
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2014. V.99. N2. P.76-81. DOI: 10.1134/S0021364014020027 publication_identifier_short.wos_identifier_type publication_identifier_short.scopus_identifier_type publication_identifier_short.rinz_identifier_type
ArticleLinkType.TRANSLATED_TO_ORIGINAL: Abramkin D.S. , Shamirzaev V.T. , Putyato M.A. , Gutakovskii A.K. , Shamirzaev T.S.
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Письма в Журнал экспериментальной и теоретической физики. 2014. V.99. N2. P.81-86. DOI: 10.7868/S0370274X14020040 publication_identifier_short.rinz_identifier_type
Dates:
Submitted: Nov 8, 2013
Published print: Mar 1, 2014
Published online: Apr 5, 2014
Identifiers:
publication_identifier.wos_identifier_type WOS:000334246800004
publication_identifier.scopus_identifier_type 2-s2.0-84897948365
publication_identifier.rinz_identifier_type 21871634
publication_identifier.accession_number_identifier_type 2014:566198
publication_identifier.chemical_accession_number_identifier_type 162:335129
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