Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Science article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Translated
|
| Journal |
Journal of Experimental and Theoretical Physics Letters (JETP Letters)
ISSN: 0021-3640
, E-ISSN: 1090-6487
|
| Output data |
Year: 2014,
Volume: 99,
Number: 2,
Pages: 76-81
Pages count
: 6
DOI:
10.1134/S0021364014020027
|
| Authors |
Abramkin D.S.
1
,
Shamirzaev V.T.
2
,
Putyuto M.A.
1
,
Gutakovskii A.K.
1
,
Shamirzaev T.S.
1,3
|
| Affiliations |
| 1 |
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences,
Novosibirsk, 630090 Russia
|
| 2 |
Novosibirsk State Technical University, Novosibirsk, 630092 Russia
|
| 3 |
Novosibirsk State University, Novosibirsk, 630090 Russia
|
|
Funding (6)
|
1
|
Russian Foundation for Basic Research
|
13-02-00073 (01201357796)
|
|
2
|
Russian Foundation for Basic Research
|
14-02-00033 (01201375890)
|
|
3
|
Russian Foundation for Basic Research
|
14-02-31102 (01201450633)
|
|
4
|
The Ministry of Education and Science of the Russian Federation
|
16.552.11.7091
|
|
5
|
Council for Grants of the President of the Russian Federation
|
СП-985.2013.5
|
|
6
|
Dynasty Foundation
|
|
Band alignment of heterostructures with pseudomorphic GaSb1 − x P x /GaP self-assembled quantum dots (SAQDs) lying on a wetting layer was studied. Coexistence of type-I and type-II band alignment was found within the same heterostructure. Wetting layer has band alignment of type-I with the lowest electronic state belonging to the X XY valley of GaSb1 − x P x conduction band, in contrast to SAQDs, which have band alignment of type-II, independently of the ternary alloy composition x. It is shown that type-I-type-II transition is a result of GaP matrix deformation around the SAQD.