Edge and Defect Luminescence of Powerful Ultraviolet InGaN/GaN Light-Emitting Diodes Full article
Conference |
Нанофизика и наноэлектроника. XX Международный Симпозиум 14-18 Mar 2016 , Нижний Новгород |
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Journal |
Semiconductors
ISSN: 1063-7826 , E-ISSN: 1090-6479 |
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Output data | Year: 2016, Volume: 50, Number: 11, Pages: 1493-1498 Pages count : 6 DOI: 10.1134/S1063782616110233 | ||||||
Tags | QUANTUM-WELLS; CARRIER INJECTION; LEDS; GAN; HETEROSTRUCTURES; RECOMBINATION; EFFICIENCY; MECHANISM | ||||||
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Abstract:
The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensity but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.
Cite:
Shamirzaev V.T.
, Gaisler V.A.
, Shamirzaev T.S.
Edge and Defect Luminescence of Powerful Ultraviolet InGaN/GaN Light-Emitting Diodes
Semiconductors. 2016. V.50. N11. P.1493-1498. DOI: 10.1134/S1063782616110233 WOS Scopus РИНЦ
Edge and Defect Luminescence of Powerful Ultraviolet InGaN/GaN Light-Emitting Diodes
Semiconductors. 2016. V.50. N11. P.1493-1498. DOI: 10.1134/S1063782616110233 WOS Scopus РИНЦ
ArticleLinkType.TRANSLATED_TO_ORIGINAL:
Шамирзаев В.Т.
, Гайслер В.А.
, Шамирзаев Т.С.
Краевая и дефектная люминесценция мощных InGaN/GaN ультрафиолетовых светоизлучающих диодов
Физика и техника полупроводников. 2016. Т.50. №11. С.1513-1518. РИНЦ
Краевая и дефектная люминесценция мощных InGaN/GaN ультрафиолетовых светоизлучающих диодов
Физика и техника полупроводников. 2016. Т.50. №11. С.1513-1518. РИНЦ
Dates:
Submitted: | Apr 27, 2016 |
Accepted: | May 10, 2016 |
Published print: | Nov 1, 2016 |
Published online: | Nov 6, 2016 |
Identifiers:
Web of science | WOS:000387363900015 |
Scopus | 2-s2.0-85013828275 |
Elibrary | 29487570 |
Chemical Abstracts | 2016:1792331 |
Chemical Abstracts (print) | 168:66423 |
OpenAlex | W2546691994 |