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Nanoscale Potential Fluctuations in Nonstoichiometrics Tantalum Oxide Full article

Общее Language: Английский, Genre: Full article,
Status: Published, Source type: Original
Journal Nanotechnology
ISSN: 0957-4484 , E-ISSN: 1361-6528
Output data Year: 2018, Volume: 29, Number: 42, Article number : 425202, Pages count : 9 DOI: 10.1088/1361-6528/aad430
Tags tantalum oxide, nanoscale potential fluctuations, ellipsometry, x-ray photoelectron spectroscopy, Raman scattering, density functional theory, ReRAM
Authors Gritsenko Vladimir A 1,2,3 , Volodin Vladimir A 1,2 , Perevalov Timofey V 1,2 , Kruchinin Vladimir N 1 , Gerasimova Alina K 1 , Aliev Vladimir Sh 1 , Prosvirin Igor P 4
Affiliations
1 Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev ave., 630090, Novosibirsk, Russia
2 Novosibirsk State University, 2 Pirogov str., 630090 Novosibirsk, Russia
3 Novosibirsk State Technical University, 20 K. Marx ave., 630073, Novosibirsk, Russia
4 Boreskov Institute of Catalysis SB RAS, 5 Lavrentiev ave., 630090, Novosibirsk, Russia

Funding (1)

1 Federal Agency for Scientific Organizations 0306-2016-0004

Abstract: The atomic and electronic structure of nonstoichiometric amorphous tantalum oxide (TaO x ) films of different composition has been investigated by means of electron microscopy, x-ray photoelectron spectroscopy, Raman and infrared spectroscopy. The dispersion of the absorption coefficient and refraction index has been studied by spectral ellipsometry. The optical spectra were interpreted using the results of a quantum-chemical simulation for crystalline orthorhombic TaO x . It was found that the presence of oxygen vacancies in the oxygen-deficient TaO x film show an optical absorption peak at 4.6 eV. It has been established that TaOx consists of stoichiometric Ta2O5, metallic Ta clusters less than 20 nm in size, and tantalum suboxides TaO y (y < 2.5). The model of nanoscale potential fluctuations of TaO x bandgap in the range of 0–4.2 eV is proposed and justified. The design of the flash memory element based on the effect of localization of electrons and holes in Ta metallic nanoclusters in the TaOx matrix is proposed.
Cite: Gritsenko V.A. , Volodin V.A. , Perevalov T.V. , Kruchinin V.N. , Gerasimova A.K. , Aliev V.S. , Prosvirin I.P.
Nanoscale Potential Fluctuations in Nonstoichiometrics Tantalum Oxide
Nanotechnology. 2018. V.29. N42. 425202 :1-9. DOI: 10.1088/1361-6528/aad430 publication_identifier_short.wos_identifier_type publication_identifier_short.scopus_identifier_type publication_identifier_short.rinz_identifier_type
Dates:
Submitted: Apr 12, 2018
Accepted: Jul 18, 2018
Published online: Aug 15, 2018
Published print: Oct 19, 2018
Identifiers:
publication_identifier.wos_identifier_type WOS:000441780000001
publication_identifier.scopus_identifier_type 2-s2.0-85052697857
publication_identifier.rinz_identifier_type 35788667
publication_identifier.accession_number_identifier_type 2018:2458022
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