HfO2-High-k Dielectric for Nanoelectronics Full article
Conference |
11th International Symposium on Solid Oxide Fuel Cells and 216th ECS Meeting with EuroCVD 17 04-09 Oct 2009 , Vienna |
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Journal |
ECS Transactions
ISSN: 1938-5862 , E-ISSN: 1938-6737 |
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Output data | Year: 2009, Volume: 25, Number: 8, Pages: 875-880 Pages count : 6 DOI: 10.1149/1.3207680 | ||||
Authors |
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Affiliations |
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Funding (1)
1 | Siberian Branch of the Russian Academy of Sciences | 97 |
Abstract:
Thermodynamic consideration of Hf-HfO2-SiO2-Si system, cross-sectional HR-TEM, XPS, IR-spectroscopy and Null ellipsometry technique were used to determine the chemical composition and structure of the HfO2 thin films deposited on Si. The interface layer consists of the hafnium silicate with smoothly varying chemical composition along the film thickness. Formation of the IL occurs as during the HfO2 film deposition so at annealing of the HfO2/SiO2/Si structure. Kinetics of the hafnium silicate formation was studied by IR-spectroscopy
Cite:
Smirnova T.P.
, Kuznetsov F.A.
, Yakovkina L.
, Kaichev V.
, Kosyakov V.
, Lebedev M.
, Kichai V.
HfO2-High-k Dielectric for Nanoelectronics
ECS Transactions. 2009. V.25. N8. P.875-880. DOI: 10.1149/1.3207680 WOS Scopus РИНЦ
HfO2-High-k Dielectric for Nanoelectronics
ECS Transactions. 2009. V.25. N8. P.875-880. DOI: 10.1149/1.3207680 WOS Scopus РИНЦ
Dates:
Published online: | Dec 17, 2019 |
Identifiers:
Web of science | WOS:000338305900111 |
Scopus | 2-s2.0-76549091892 |
Elibrary | 15297469 |
Chemical Abstracts | 2009:1370864 |
Chemical Abstracts (print) | 153:322862 |
OpenAlex | W2263794520 |