Thin Films of (HfO2)x(Al2O 3)1-x Alloys: Preparation, Chemical Structure and Dielectric Properties
10th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices
01-06 Jul 2009
International Workshop and Tutorials on Electron Devices and Materials, EDM - Proceedings
||β-diketonates, Dielectrics, Thin films
Lebedev Mikhail S.
Smirnova Tamara P.
Kaichev Vasily V.
Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russia
Boreskov Institute of Catalysis SB RAS, Novosibirsk, Russia
Thin films of (HfO2)x(Al2O3)1-x alloys were prepared by chemical vapor deposition using the volatile coordination compounds. Amorphous structure of the films has been revealed by X-ray analysis when the Al content is of >30%. It was shown by EDS and XPS that Al concentration increases with rising the substrate temperature and content of the Al(acac)3 in mixture of the precursors. Formation of (HfO2)x(Al2O3)1-x alloys is rather than HfO2 and Al2O3 mixture. Decreasing the Al concentration in the line from the interface to the films surface has been observed for the films deposited by using the source with the precursors mixture. The refraction index is the function of the chemical composition variations through the film thickness. The refractive index is invariant through the thickness for the layers deposited by using two spaced sources of the precursors. This is an indication of the uniform components distribution. As the dielectrics for the MIS-structures the (HfO2)x(Al2O3)1-x thin films show the lower permittivity (k=11-16) than HfO2 films (k=15 - 20), but the smaller leakage current to values of j = 10-6 - 10-8 A/cm2.