Interfaces Analysis of the HfO2/SiO2/Si Structure
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Original
|
| Journal |
Journal of Physics and Chemistry of Solids
ISSN: 0022-3697
|
| Output data |
Year: 2010,
Volume: 71,
Number: 5,
Pages: 836-840
Pages count
: 5
DOI:
10.1016/j.jpcs.2010.02.010
|
| Tags |
A. Thin films |
| Authors |
Smirnova T.P.
1
,
Yakovkina L.V.
1
,
Beloshapkin S.A.
3
,
Kaichev V.V.
2
,
Alferova N.I.
1
,
Jeong-Hwan Song
4
|
| Affiliations |
| 1 |
Nikolaev Institute of Inorganic Chemistry SB RAS, Lavrentiev Ave. 3, Novosibirsk 630090, Russia
|
| 2 |
Boreskov Institute of Catalysis SB RAS, Lavrentiev Ave. 5, Novosibirsk 630090, Russia
|
| 3 |
Materials and Surface Science Institute, University of Limerick, Ireland
|
| 4 |
Department of Information & Electronic Materials Engineering, PaiChai University, Daejeon 302-735, Korea
|
|
Funding (1)
The physical and chemical properties of the HfO2/SiO2/Si stack have been analyzed using cross-section HR TEM, XPS, IR-spectroscopy and ellipsometry. HfO2 films were deposited by the MO CVD method using as precursors the tetrakis 2,2,6,6 tetramethyl-3,5 heptanedionate hafnium—Hf(dpm)4 and dicyclopentadienil-hafnium-bis-diethylamide—Сp2Hf(N(C2H5)2)2.
The amorphous interface layer (IL) between HfO2 and silicon native oxide has been observed by the HRTEM method. The interface layer comprises hafnium silicate with a smooth varying of chemical composition through the IL thickness. The interface layer formation occurs both during HfO2 synthesis, and at the annealing of the HfO2/SiO2/Si stack. It was concluded from the XPS, and the IR-spectroscopy that the hafnium silicate formation occurs via a solid-state reaction at the HfO2/SiO2 interface, and its chemical structure depends on the thickness of the SiO2 underlayer.