Semiconductor Heterosystem InAs-ZnS. Physical and Chemical Properties Full article
Conference |
Satellite Conference "Applied Mechanics and Dynamics Systems" 05-07 Nov 2019 , Омск |
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Journal |
Journal of Physics: Conference Series
ISSN: 1742-6588 , E-ISSN: 1742-6596 |
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Output data | Year: 2020, Volume: 1441, Number: 1, Article number : 012007, Pages count : 9 DOI: 10.1088/1742-6596/1441/1/012007 | ||||
Tags | bulk and acid-base surface properties; consistent patterns; correlations; semiconductor gas analysis; solid solutions | ||||
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Abstract:
According to the developed methodology based on isothermal diffusion of the initial binary compounds (InAs, ZnS) in the light of their known bulk properties, the InAs-ZnS system solid solutions have been obtained. Pursuant to the results of the X-ray investigation, they have been certified as substitutional solid solutions with the cubic sphalerite structure. The surface (acid-base) properties of the InAs-ZnS system components corresponding to the weak acidic area have been studied. Consistent patterns in changes with the composition of the studied properties have been established, which are both statistical (smooth) and extreme. Correlations between the consistent patterns and, respectively, the link between surface and bulk properties, which allow predicting the desired materials for the semiconductor gas analysis have been found. © Published under licence by IOP Publishing Ltd.
Cite:
Kirovskaya I.A.
, Mironova E.V.
, Umanskiy I.Y.
, Ekkert A.O.
, Ekkert R.V.
, Kopylova E.N.
, Blesman A.I.
, Polonyankin D.A.
, Goncharov V.B.
Semiconductor Heterosystem InAs-ZnS. Physical and Chemical Properties
Journal of Physics: Conference Series. 2020. V.1441. N1. 012007 :1-9. DOI: 10.1088/1742-6596/1441/1/012007 Scopus РИНЦ
Semiconductor Heterosystem InAs-ZnS. Physical and Chemical Properties
Journal of Physics: Conference Series. 2020. V.1441. N1. 012007 :1-9. DOI: 10.1088/1742-6596/1441/1/012007 Scopus РИНЦ
Files:
Full text from publisher
Dates:
Published online: | Jan 13, 2020 |
Published print: | Jan 14, 2020 |
Identifiers:
Scopus | 2-s2.0-85079035349 |
Elibrary | 43253095 |
Chemical Abstracts | 2020:1920217 |
OpenAlex | W2999418672 |