Influence of the Active TaN/ZrOx/Ni Memristor Layer Oxygen Content on Forming and Resistive Switching Behavior
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Original
|
| Journal |
Nanotechnology
ISSN: 0957-4484
, E-ISSN: 1361-6528
|
| Output data |
Year: 2021,
Volume: 32,
Number: 18,
Article number
: 185205,
Pages count
: 19
DOI:
10.1088/1361-6528/abce7b
|
| Tags |
zirconium oxide, forming-free, memristor, ReRAM, SCLC, XPS |
| Authors |
Voronkovskii V.A.
1
,
Aliev V.S.
1
,
Gerasimova A.K.
1
,
Perevalov T.V.
1,2
,
Prosvirin I.P.
3
,
Islamov D.R.
1,2
|
| Affiliations |
| 1 |
Rzhanov Institute of Semiconductor Physics SB RAS
|
| 2 |
Novosibirsk State University
|
| 3 |
Boreskov Institute of Catalysis SB RAS
|
|
Funding (2)
|
1
|
Russian Science Foundation
|
16-19-00002
|
|
2
|
Ministry of Science and Higher Education of the Russian Federation
|
0242-2019-0002
|
The influence of oxygen content in active zirconium oxide layers on the electrophysical properties of TaN/ZrOx/Ni memristors is investigated. The [O]/[Zr] atomic ratio (x) in the oxide layers was varied in the range from 1.56 to 2.0 by changing the partial oxygen pressure during their deposition by ion-beam sputtering deposition. The ZrOx film compositions were analyzed using X-ray photoelectron spectroscopy and density functional theory simulations. The multiple resistive switching phenomenon in TaN/ZrOx/Ni memristors was found to occur in a certain range of x ≥ 1.78. With the x value decreasing in the oxide layers, the forming voltage of memristors decreased. Furthermore, at the lower edge of x values the switchable range, they no longer required forming. At the same time, as the x value decreased, the memory window (ION/IOFF ratio) also decreased from 5 to 1 order of magnitude due to an increase in the memristor conductivity in the high resistance state. In order to identify the underlying conduction mechanism of TaN/ZrOx/Ni memristors, their current-voltage curves in low and high resistance states were analyzed in the temperature range from 250 to 400 K for the samples with x = 1.78 (forming-free) and 1.97 (which required forming). It was found that, for both samples, the conductivity in the low-resistance state is characterized by the trap-free space-charge-limited current (SCLC) model, whereas the conductivity in the high-resistance state is characterized by the trap-mediated SCLC model. The possible origins of structural defects involved in the memristor conductivity and resistive switching are discussed based on the obtained results.