Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma Full article
Journal |
Journal of Experimental and Theoretical Physics
ISSN: 1063-7761 , E-ISSN: 1090-6509 |
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Output data | Year: 2020, Volume: 131, Number: 6, Pages: 940-944 Pages count : 5 DOI: 10.1134/s1063776120110084 | ||||||
Tags | Crystal atomic structure; Cyclotrons; Electron cyclotron resonance; Electronic structure; Hydrogen storage; Nonvolatile storage; Photoelectron spectroscopy; Photoelectrons; Photons; Silica; Silicon oxides; Thin films; X ray photoelectron spectroscopy | ||||||
Authors |
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Affiliations |
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Funding (1)
1 | Russian Science Foundation | 19-19-00286 (АААА-А19-119120490056-8) |
Abstract:
The silicon oxide thin films obtained by thermal SiO2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO2, the more so the longer the treatment time. The atomic structure of the SiOx < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell.
Cite:
Perevalov T.V.
, Iskhakzai R.M.K.
, Aliev V.S.
, Gritsenko V.A.
, Prosvirin I.P.
Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma
Journal of Experimental and Theoretical Physics. 2020. V.131. N6. P.940-944. DOI: 10.1134/s1063776120110084 WOS Scopus РИНЦ
Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma
Journal of Experimental and Theoretical Physics. 2020. V.131. N6. P.940-944. DOI: 10.1134/s1063776120110084 WOS Scopus РИНЦ
Original:
Перевалов Т.В.
, Исхакзай Р.М.Х.
, Алиев В.Ш.
, Гриценко В.А.
, Просвирин И.П.
Атомная и электронная структура пленок SiOx, полученных с помощью водородной плазмы электрон-циклотронного резонанса
Журнал экспериментальной и теоретической физики. 2020. Т.158. №6(12). С.1083-1088. DOI: 10.31857/s004445102012007x РИНЦ
Атомная и электронная структура пленок SiOx, полученных с помощью водородной плазмы электрон-циклотронного резонанса
Журнал экспериментальной и теоретической физики. 2020. Т.158. №6(12). С.1083-1088. DOI: 10.31857/s004445102012007x РИНЦ
Dates:
Submitted: | May 7, 2020 |
Accepted: | Jul 1, 2020 |
Published print: | Dec 1, 2020 |
Published online: | Feb 4, 2021 |
Identifiers:
Web of science | WOS:000614892700007 |
Scopus | 2-s2.0-85100572713 |
Elibrary | 46745507 |
Chemical Abstracts | 2021:320497 |
OpenAlex | W3128416068 |