Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Translated
|
| Journal |
Journal of Experimental and Theoretical Physics
ISSN: 1063-7761
, E-ISSN: 1090-6509
|
| Output data |
Year: 2020,
Volume: 131,
Number: 6,
Pages: 940-944
Pages count
: 5
DOI:
10.1134/s1063776120110084
|
| Authors |
Perevalov T.V.
1,2
,
Iskhakzai R.M.Kh.
1
,
Aliev V.Sh.
1
,
Gritsenko V.A.
1,2
,
Prosvirin I.P.
3
|
| Affiliations |
| 1 |
Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090 Russia
|
| 2 |
Novosibirsk State University, Novosibirsk, 630090 Russia
|
| 3 |
Boreskov Institute of Catalysis, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090 Russia
|
|
Funding (1)
|
1
|
Russian Science Foundation
|
19-19-00286 (АААА-А19-119120490056-8)
|
The silicon oxide thin films obtained by thermal SiO2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO2, the more so the longer the treatment time. The atomic structure of the SiOx < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell.