Synthesis and Properties of Dielectric (HfO2)1 − x (Sc2O3) x Films Full article
Journal |
Inorganic Materials
ISSN: 0020-1685 , E-ISSN: 1608-3172 |
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Output data | Year: 2013, Volume: 49, Number: 2, Pages: 172-178 Pages count : 7 DOI: 10.1134/S0020168513020234 | ||||
Tags | Dielectric Permittivity; Hafnium; Scandium; Leakage Current Density; Scandium Content | ||||
Authors |
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Affiliations |
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Funding (1)
1 | Russian Foundation for Basic Research | 12-03-00131 |
Abstract:
(HfO2)1 − x (Sc2O3) x films have been grown by chemical vapor deposition (CVD) using the volatile complexes hafnium 2,2,6,6-tetramethyl-3,5-heptanedionate (Hf(thd)4) and scandium 2,2,6,6-tetramethyl-3,5-heptanedionate (Sc(thd)3) as precursors. The composition and crystal structure of the films containing 1 to 36 at % Sc have been determined. The results demonstrate that, in the composition range 9 to 14 at % scandium, the films are nanocrystalline and consist of an orthorhombic three-component phase, which has not been reported previously. Using Al/(HfO2)1 − x (Sc2O3) x /Si test structures, we have determined the dielectric permittivity of the films and the leakage current through the insulator as functions of scandium concentration. The permittivity of the films with the orthorhombic structure reaches k = 42–44, with a leakage current density no higher than ∼10−8 A/cm2.
Cite:
Yakovkina L.V.
, Smirnova T.P.
, Borisov V.O.
, Kichai V.N.
, Kaichev V.V.
Synthesis and Properties of Dielectric (HfO2)1 − x (Sc2O3) x Films
Inorganic Materials. 2013. V.49. N2. P.172-178. DOI: 10.1134/S0020168513020234 WOS Scopus РИНЦ
Synthesis and Properties of Dielectric (HfO2)1 − x (Sc2O3) x Films
Inorganic Materials. 2013. V.49. N2. P.172-178. DOI: 10.1134/S0020168513020234 WOS Scopus РИНЦ
Original:
Яковкина Л.В.
, Смирнова Т.П.
, Борисов В.О.
, Кичай В.Н.
, Каичев В.В.
Синтез и свойства диэлектрических пленок (HfO2)1-x(Sc2O3)x
Неорганические материалы. 2013. Т.49. №2. С.165-172. DOI: 10.7868/S0002337X12120147 РИНЦ
Синтез и свойства диэлектрических пленок (HfO2)1-x(Sc2O3)x
Неорганические материалы. 2013. Т.49. №2. С.165-172. DOI: 10.7868/S0002337X12120147 РИНЦ
Dates:
Submitted: | Jul 25, 2011 |
Accepted: | Mar 12, 2012 |
Published online: | Jan 5, 2013 |
Published print: | Feb 1, 2013 |
Identifiers:
Web of science | WOS:000313094400010 |
Scopus | 2-s2.0-84877050798 |
Elibrary | 20442858 |
Chemical Abstracts | 2013:17664 |
Chemical Abstracts (print) | 159:112019 |
OpenAlex | W1994186114 |