Silicon Carbonitride Films as a Promising Material Synthesized from New Sources Full article
Journal |
Chemistry for Sustainable Development
ISSN: 1817-1818 |
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Output data | Year: 2001, Volume: 9, Number: 7, Pages: 23-29 Pages count : 7 | ||||||
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Abstract:
Silicon carbonitride films were synthesized by means of the chemical vapour deposition (CVD) process in the scheme with remote plasma. Initial compounds were the silyl derivatives of 1,1-dimethyl hydrazine: dimethyl(2,2-dimethylhydrazino)-silane and dimethyl-bis-(2,2-dimethylhydrazino)silane. The molecules of the monomers contain the bonds Si-N, Si-C and C-N which are necessary for the formation of silicon carbonitride.
Cite:
Smirnova T.P.
, Badalyan A.M.
, Yakovkina L.V.
, Sysoeva N.P.
, Asanov I.P.
, Kaichev V.V.
, Bukhtiyarov V.I.
, Shmakov A.N.
, Rakhlin V.I.
, Fomina A.N.
Silicon Carbonitride Films as a Promising Material Synthesized from New Sources
Chemistry for Sustainable Development. 2001. V.9. N7. P.23-29. РИНЦ
Silicon Carbonitride Films as a Promising Material Synthesized from New Sources
Chemistry for Sustainable Development. 2001. V.9. N7. P.23-29. РИНЦ
ArticleLinkType.TRANSLATED_TO_ORIGINAL:
Смирнова Т.П.
, Бадалян А.М.
, Яковкина Л.В.
, Сысоева Н.П.
, Асанов И.П.
, Каичев В.В.
, Бухтияров В.И.
, Шмаков А.Н.
, Рахлин В.И.
, Фомина А.Н.
Пленки карбонитрида кремния - перспективный функциональный материал, синтезированный из новых источников
Химия в интересах устойчивого развития. 2001. Т.9. №7. С.857-864. РИНЦ
Пленки карбонитрида кремния - перспективный функциональный материал, синтезированный из новых источников
Химия в интересах устойчивого развития. 2001. Т.9. №7. С.857-864. РИНЦ
Identifiers:
Elibrary | 30644034 |
publication.block.citing_info:
БД | Цитирований |
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Elibrary | 3 |