Silicon Carbonitride Films as a Promising Material Synthesized from New Sources
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Translated
|
| Journal |
Chemistry for Sustainable Development
ISSN: 1817-1818
|
| Output data |
Year: 2001,
Volume: 9,
Number: 7,
Pages: 23-29
Pages count
: 7
|
| Authors |
Smirnova Tamara P.
1
,
Badalyan Aram M.
1
,
Yakovkina Lyubov V.
1
,
Sysoeva Natalia P.
1
,
Asanov Igor P.
1
,
Kaichev Vasily V.
2
,
Bukhtiyarov Valery I.
2
,
Shmakov Alexander N.
2
,
Rakhlin Vladimir I.
3
,
Fomina Anna N.
3
|
| Affiliations |
| 1 |
Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Pr. Akademika Lavrentyeva 3, Novosibirsk 630090 (Russia)
|
| 2 |
G. K. Boreskov Institute of Catalysis, Siberian Branch of the Russian Academy of Sciences, Pr. Akademika Lavrentyeva 5, Novosibirsk 630090 (Russia)
|
| 3 |
A. A. Favorsky Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences, Ul. Favorskogo 1, Irkutsk 664033 (Russia)
|
|
Silicon carbonitride films were synthesized by means of the chemical vapour deposition (CVD) process in the scheme with remote plasma. Initial compounds were the silyl derivatives of 1,1-dimethyl hydrazine: dimethyl(2,2-dimethylhydrazino)-silane and dimethyl-bis-(2,2-dimethylhydrazino)silane. The molecules of the monomers contain the bonds Si-N, Si-C and C-N which are necessary for the formation of silicon carbonitride.