A Study of the Structure of (HfO2 ) x (Al2 O3)1−x /Si Films by X-Ray Photoelectron Spectroscopy
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Translated
|
| Journal |
Journal of Structural Chemistry
ISSN: 0022-4766
, E-ISSN: 1573-8779
|
| Output data |
Year: 2011,
Volume: 52,
Number: 3,
Pages: 480-487
Pages count
: 8
DOI:
10.1134/S002247661103005X
|
| Tags |
Alumina, Binary solution, Hafnium aluminate, Hafnium dioxide, Layer-by-layer analysis, X-ray photoelectron spectroscopy |
| Authors |
Kaichev V.V.
1
,
Dubinin Yu.V.
1
,
Smirnova T.P.
2
,
Lebedev M.S.
2
|
| Affiliations |
| 1 |
Boreskov Institute of Catalysis SB RAS
|
| 2 |
Nikolaev Institute of Inorganic Chemistry SB RAS
|
|
Funding (1)
By X-ray photoelectron spectroscopy (XPS), using the technique of layer-by-layer analysis, the films of (HfO2) x (Al2O3)1−x solid solutions synthesized by chemical vapor deposition are studied. The possibility to determine the structure of solid binary solutions based on the analysis of the XPS spectra is demonstrated.