A Study of the Structure of (HfO2 ) x (Al2 O3)1−x /Si Films by X-Ray Photoelectron Spectroscopy Full article
Journal |
Journal of Structural Chemistry
ISSN: 0022-4766 , E-ISSN: 1573-8779 |
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Output data | Year: 2011, Volume: 52, Number: 3, Pages: 480-487 Pages count : 8 DOI: 10.1134/S002247661103005X | ||||
Tags | Alumina, Binary solution, Hafnium aluminate, Hafnium dioxide, Layer-by-layer analysis, X-ray photoelectron spectroscopy | ||||
Authors |
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Affiliations |
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Funding (1)
1 | Siberian Branch of the Russian Academy of Sciences | 70 |
Abstract:
By X-ray photoelectron spectroscopy (XPS), using the technique of layer-by-layer analysis, the films of (HfO2) x (Al2O3)1−x solid solutions synthesized by chemical vapor deposition are studied. The possibility to determine the structure of solid binary solutions based on the analysis of the XPS spectra is demonstrated.
Cite:
Kaichev V.V.
, Dubinin Y.V.
, Smirnova T.P.
, Lebedev M.S.
A Study of the Structure of (HfO2 ) x (Al2 O3)1−x /Si Films by X-Ray Photoelectron Spectroscopy
Journal of Structural Chemistry. 2011. V.52. N3. P.480-487. DOI: 10.1134/S002247661103005X WOS Scopus РИНЦ
A Study of the Structure of (HfO2 ) x (Al2 O3)1−x /Si Films by X-Ray Photoelectron Spectroscopy
Journal of Structural Chemistry. 2011. V.52. N3. P.480-487. DOI: 10.1134/S002247661103005X WOS Scopus РИНЦ
Original:
Каичев В.В.
, Дубинин Ю.В.
, Смирнова Т.П.
, Лебедев М.С.
Изучение структуры пленок (HfO2)x(Al2O3)1–x/Si методом рентгеновской фотоэлектронной спектроскопии
Журнал структурной химии. 2011. Т.52. №3. С.495-502. RSCI РИНЦ
Изучение структуры пленок (HfO2)x(Al2O3)1–x/Si методом рентгеновской фотоэлектронной спектроскопии
Журнал структурной химии. 2011. Т.52. №3. С.495-502. RSCI РИНЦ
Dates:
Submitted: | Mar 5, 2010 |
Published print: | Jun 1, 2011 |
Published online: | Jul 29, 2011 |
Identifiers:
Web of science | WOS:000294860200005 |
Scopus | 2-s2.0-80054764488 |
Elibrary | 18009920 |
Chemical Abstracts | 2011:947680 |
Chemical Abstracts (print) | 155:601881 |
OpenAlex | W2040937254 |