Structure, Chemistry and Luminescence Properties of Dielectric LaxHf1-xOy Films
Full article
Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Original
|
Journal |
Materials Chemistry and Physics
ISSN: 0254-0584
, E-ISSN: 1879-3312
|
Output data |
Year: 2016,
Volume: 175,
Pages: 200-205
Pages count
: 6
DOI:
10.1016/j.matchemphys.2016.03.019
|
Tags |
Defects, Electronic materials, Luminescence, Thin films |
Authors |
Kaichev V.V.
1,2
,
Smirnova T.P.
3
,
Yakovkina L.V.
3
,
Ivanova E.V.
4
,
Zamoryanskaya M.V.
4
,
Saraev A.A.
1,2
,
Pustovarov V.A.
5
,
Perevalov T.V.
2,6
,
Gritsenko V.A.
2,6
|
Affiliations |
1 |
Boreskov Institute of Catalysis, Novosibirsk, Russia
|
2 |
Novosibirsk State University, Novosibirsk, Russia
|
3 |
Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia
|
4 |
Ioffe Physical-Technical Institute, St. Petersburg, Russia
|
5 |
Ural State Technical University, Ekaterinburg, Russia
|
6 |
Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia
|
|
Funding (1)
1
|
Russian Science Foundation
|
14-19-00192
|
Dielectric films of La2O3, HfO2, and LaxHf1-xOy were synthesized by metal-organic chemical vapor deposition. Structural, chemical, and luminescence properties of the films were studied using X-ray photoelectron spectroscopy, methods of X-ray diffraction and selected area electron diffraction, high-resolution transmission electron microscopy, and a cathodoluminescence technique. It was found that doping of hafnium oxide with lanthanum leads to the formation of a continuous series of solid solutions with a cubic structure. This process is accompanied by the formation of oxygen vacancies in the HfO2 lattice. Cathodoluminescence spectra of the LaxHf1-xOy/Si films exhibited a wide band with the maximum near 2.4–2.5 eV, which corresponds to the blue emission. Quantum-chemical calculations showed that this blue band is due to oxygen vacancies in the HfO2 lattice.