Electronic State of Nanodiamond/Graphite Interfaces
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Original
|
| Journal |
Applied Physics A: Materials Science and Processing
ISSN: 0947-8396
, E-ISSN: 1432-0630
|
| Output data |
Year: 2005,
Volume: 81,
Number: 2,
Pages: 393-398
Pages count
: 6
DOI:
10.1007/s00339-004-2565-6
|
| Authors |
Okotrub A.V.
1
,
Bulusheva L.G.
1
,
Kuznetsov V.L.
2
,
Guselʹnikov A.V.
1
,
Chuvilin A.L.
2
|
| Affiliations |
| 1 |
Nikolaev Institute of Inorganic Chemistry SB RAS
|
| 2 |
Boreskov Institute of Catalysis SB RAS
|
|
Funding (2)
|
1
|
International Association for the Promotion of Co-operation with Scientists from the New Independent States of the Former Soviet Union
|
01-254
|
|
2
|
Russian Foundation for Basic Research
|
03-03-32336
|
The electronic state of nanodiamond/graphite interfaces in samples prepared by annealing of nanodiamonds (ND) at 1150–1600 K has been probed using X-ray fluorescence spectroscopy and field-emission measurements. Comparison between [C]Kα spectra of ND before and after annealing revealed an enhancement of density of high-energy occupied states in the products. A quantum-chemical calculation using a carbon model showed that the observed states could originate from the electrons of dangling bonds produced by peeling of a graphitic shell from the (111) surface of a diamond particle. The developed graphitic layers screen the weakly bonding electrons, which results in a lowering of the efficiency of field-electron emission from the samples with an increase of annealing temperature.