Plasma Deposition and Properties of Silicon Carbonitride Films
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Translated
|
| Journal |
Inorganic Materials
ISSN: 0020-1685
, E-ISSN: 1608-3172
|
| Output data |
Year: 2005,
Volume: 41,
Number: 7,
Pages: 706-712
Pages count
: 7
DOI:
10.1007/s10789-005-0195-9
|
| Authors |
Smirnova T.P.
1
,
Badalyan A.M.
1
,
Borisov V.O.
1
,
Kaichev V.V.
2
,
Bakhturova L.F.
1
,
Kichai V.N.
1
,
Rakhlin V.I.
3
,
Shainyan B.A.
3
|
| Affiliations |
| 1 |
Nikolaev Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090 Russia
|
| 2 |
Boreskov Institute of Catalysis, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 5, Novosibirsk, 630090 Russia
|
| 3 |
Favorskii Institute of Chemistry, Siberian Division, Russian Academy of Sciences, ul. Favorskogo 1, Irkutsk, 664033 Russia
|
|
Funding (4)
|
1
|
Президиум СО РАН
|
114
|
|
2
|
Russian Foundation for Basic Research
|
03-03-32080
|
|
3
|
Council for Grants of the President of the Russian Federation
|
НШ-1042.2003.3
|
|
4
|
Council for Grants of the President of the Russian Federation
|
НШ-1129.2003.3
|
A variety of advanced analytical techniques were used to characterize silicon carbonitride films grown from new volatile nitrogen-rich silyl derivatives of asymmetrical dimethylhydrazine: (CH3)2HSiNHN(CH3)2 (DMDMSH) and Me2Si(NHNMe2)2 (bisDMHDMS). The results demonstrate that the films contain only Si-C, Si-N, and C(sp3)-N bonds, in relative amounts that depend on the molecular structure of the precursor and deposition conditions. The Si-C/[Si-N + C(sp3)-N] ratio is considerably larger in the films grown from DMDMSH. The data obtained by a variety of spectroscopic techniques provide solid evidence that some of the films contain C(sp3)-N bonds, characteristic of superhard materials, and that the films have a complex, framework structure, rather than being a mixture of Si3N4, SiC, and C3N4. The structure of the films depends on the N : Si ratio in the precursor: at N : Si = 2, the films are amorphous and contain nanocrystalline inclusions with a tetragonal structure; at N : Si = 4, the films are purely amorphous. The ability to control the chemical composition and structure of deposits allowed us to produce films with various physicochemical and electrical properties.