1
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Перевалов Т.В.
, Исхакзай Р.М.Х.
, Просвирин И.П.
, Алиев В.Ш.
, Гриценко В.А.
Бесформовочные мемристоры на основе оксида гафния, обработанного в водородной плазме электрон-циклотронного резонанса
Письма в Журнал экспериментальной и теоретической физики. 2022.
Т.115. №1-2(1). С.89-93. DOI: 10.31857/s1234567822020045
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2
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Perevalov T.V.
, Iskhakzai R.M.K.
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Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2022.
V.115. N2. P.79-83. DOI: 10.1134/s0021364022020084
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3
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Voronkovskii V.A.
, Aliev V.S.
, Gerasimova A.K.
, Perevalov T.V.
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Influence of the Active TaN/ZrOx/Ni Memristor Layer Oxygen Content on Forming and Resistive Switching Behavior
Nanotechnology. 2021.
V.32. N18. 185205
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4
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Voronkovskii V.A.
, Perevalov T.V.
, Iskhakzay R.M.H.
, Aliev V.S.
, Gritsenko V.A.
, Prosvirin I.P.
Phonon-Assisted Electron Tunneling between Traps in Silicon Oxide Films Treated in Hydrogen Plasma
Journal of Non-Crystalline Solids. 2020.
V.546. 120256
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5
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Перевалов Т.В.
, Исхакзай Р.М.Х.
, Алиев В.Ш.
, Гриценко В.А.
, Просвирин И.П.
Атомная и электронная структура пленок SiOx, полученных с помощью водородной плазмы электрон-циклотронного резонанса
Журнал экспериментальной и теоретической физики. 2020.
Т.158. №6(12). С.1083-1088. DOI: 10.31857/s004445102012007x
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6
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Perevalov T.V.
, Iskhakzai R.M.K.
, Aliev V.S.
, Gritsenko V.A.
, Prosvirin I.P.
Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma
Journal of Experimental and Theoretical Physics. 2020.
V.131. N6. P.940-944. DOI: 10.1134/s1063776120110084
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7
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Gritsenko V.A.
, Perevalov T.V.
, Voronkovskii V.A.
, Gismatulin A.A.
, Kruchinin V.N.
, Aliev V.S.
, Pustovarov V.A.
, Prosvirin I.P.
, Roizin Y.
Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide
ACS Applied Materials and Interfaces. 2018.
V.10. N4. P.3769-3775. DOI: 10.1021/acsami.7b16753
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8
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Perevalov T.V.
, Gritsenko V.A.
, Gismatulin A.A.
, Voronkovskii V.A.
, Gerasimova A.K.
, Aliev V.S.
, Prosvirin I.A.
Electronic Structure and Charge Transport in Nonstoichiometric Tantalum Oxide
Nanotechnology. 2018.
V.29. N26. 264001
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9
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Gritsenko V.A.
, Volodin V.A.
, Perevalov T.V.
, Kruchinin V.N.
, Gerasimova A.K.
, Aliev V.S.
, Prosvirin I.P.
Nanoscale Potential Fluctuations in Nonstoichiometrics Tantalum Oxide
Nanotechnology. 2018.
V.29. N42. 425202
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10
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Gritsenko V.A.
, Novikov Y.N.
, Perevalov T.V.
, Kruchinin V.N.
, Aliev V.S.
, Gerasimova A.K.
, Erenburg S.B.
, Trubina S.V.
, Kvashnina K.O.
, Prosvirin I.P.
, Lanza M.
Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization
Advanced Electronic Materials. 2018.
1700592
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11
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Aliev V.S.
, Gerasimova A.K.
, Kruchinin V.N.
, Gritsenko V.A.
, Prosvirin I.P.
, Badmaeva I.A.
The Atomic Structure and Chemical Composition of HfOx (x<2) Films Prepared by Ion-Beam Sputtering Deposition
Materials Research Express. 2016.
V.3. 085008
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12
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Islamov D.R.
, Kruchinin V.N.
, Aliev V.S.
, Perevalov T.V.
, Gritsenko V.A.
, Prosvirin I.P.
, Orlov O.M.
, Chin A.
Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides
Advances in Science and Technology. 2016.
V.99. P.69-74. DOI: 10.4028/www.scientific.net/ast.99.69
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13
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Islamov D.R.
, Perevalov T.V.
, Gritsenko V.A.
, Aliev V.S.
, Saraev A.A.
, Kaichev V.V.
, Ivanova E.V.
, Zamoryanskaya M.V.
, Chin A.
The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element
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14
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Orlov O.M.
, Krasnikov G.Y.
, Gritsenko V.A.
, Kruchinin V.N.
, Perevalov T.V.
, Aliev V.S.
, Islamov D.R.
, Prosvirin I.P.
Nanoscale Potential Fluctuation in Non-Stoichiometric Hafnium Suboxides
ECS Transactions. 2015.
V.69. N5. P.237-241. DOI: 10.1149/06905.0237ecst
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15
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Kruchinin V.N.
, Aliev V.S.
, Perevalov T.V.
, Islamov D.R.
, Gritsenko V.A.
, Prosvirin I.P.
, Cheng C.H.
, Chin A.
Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM
Microelectronic Engineering. 2015.
V.147. P.165-167. DOI: 10.1016/j.mee.2015.04.091
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16
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Perevalov T.V.
, Aliev V.S.
, Gritsenko V.A.
, Saraev A.A.
, Kaichev V.V.
, Ivanova E.V.
, Zamoryanskaya M.V.
The Origin of 2.7 eV Luminescence and 5.2 eV Excitation Band in Hafnium Ooxide
Applied Physics Letters. 2014.
V.104. N7. P.071904-1-071904-5. DOI: 10.1063/1.4865259
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17
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Perevalov T.V.
, Aliev V.S.
, Gritsenko V.A.
, Saraev A.A.
, Kaichev V.V.
Electronic Structure of Oxygen Vacancies in Hafnium Oxide
Microelectronic Engineering. 2013.
V.109. P.21-23. DOI: 10.1016/j.mee.2013.03.005
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18
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Ivanov M.V.
, Perevalov T.V.
, Aliev V.S.
, Gritsenko V.A.
, Kaichev V.V.
Electronic Structure of δ-Ta2O5 with Oxygen Vacancy: ab initio Calculations and Comparison with Experiment
Journal of Applied Physics. 2011.
V.110. P.024115-1 - 024115-5. DOI: 10.1063/1.3606416
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19
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Иванов М.В.
, Перевалов Т.В.
, Алиев В.Ш.
, Гриценко В.А.
, Каичев В.В.
Моделирование ab initio электронной структуры δ-Ta2O5 с кислородной вакансией и сравнение с экспериментом
Журнал экспериментальной и теоретической физики. 2011.
Т.139. №6. С.1182-1189.
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20
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Ivanov M.V.
, Perevalov T.V.
, Aliev V.S.
, Gritsenko V.A.
, Kaichev V.V.
Ab initio Simulation of the Electronic Structure of δ-Ta2O5 with Oxygen Vacancy and Comparison with Experiment
Journal of Experimental and Theoretical Physics. 2011.
V.112. N6. P.1035-1041. DOI: 10.1134/S1063776111050037
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