1
|
Gismatulin A.A.
, Voronkovskii V.A.
, Kamaev G.N.
, Novikov Y.N.
, Kruchinin V.N.
, Krivyakin G.K.
, Gritsenko V.A.
, Prosvirin I.P.
, Chin A.
Electronic Structure and Charge Transport Mechanism in a Forming-Free SiOx-Based Memristor
Nanotechnology. 2020.
V.31. N50. 505704
:1-10. DOI: 10.1088/1361-6528/abb505
WOS
Scopus
РИНЦ
|
2
|
Gismatulin A.A.
, Kruchinin V.N.
, Gritsenko V.A.
, Prosvirin I.P.
, Yen T.-J.
, Chin A.
Charge Transport Mechanism of High-Resistive State in RRAM Based on SiOx
Applied Physics Letters. 2019.
V.114. N3. 033503
:1-5. DOI: 10.1063/1.5074116
WOS
Scopus
РИНЦ
|
3
|
Gritsenko V.A.
, Kruchinin V.N.
, Prosvirin I.P.
, Novikov Y.N.
, Chin A.
, Volodin V.A.
Atomic and Electronic Structures of a-SiNx:H
Journal of Experimental and Theoretical Physics. 2019.
V.129. N5. P.924-934. DOI: 10.1134/S1063776119080132
WOS
Scopus
РИНЦ
|
4
|
Гриценко В.А.
, Кручинин В.Н.
, Просвирин И.П.
, Новиков Ю.Н.
, Чин А.
, Володин В.А.
Строение и электронная структура a-SiNx:H
Журнал экспериментальной и теоретической физики. 2019.
Т.156. №5(11). С.1003-1015. DOI: 10.1134/s0044451019110166
РИНЦ
|
5
|
Islamov D.R.
, Perevalov T.V.
, Gritsenko V.A.
, Aliev V.S.
, Saraev A.A.
, Kaichev V.V.
, Ivanova E.V.
, Zamoryanskaya M.V.
, Chin A.
The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element
Monography chapter
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications.
– Elsevier Inc.,
2016.
– C.493-504. – ISBN 9780128105122. DOI: 10.1016/B978-0-12-810512-2.00020-2
WOS
Scopus
РИНЦ
|
6
|
Islamov D.R.
, Kruchinin V.N.
, Aliev V.S.
, Perevalov T.V.
, Gritsenko V.A.
, Prosvirin I.P.
, Orlov O.M.
, Chin A.
Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides
Advances in Science and Technology. 2016.
V.99. P.69-74. DOI: 10.4028/www.scientific.net/ast.99.69
РИНЦ
|
7
|
Kruchinin V.N.
, Aliev V.S.
, Perevalov T.V.
, Islamov D.R.
, Gritsenko V.A.
, Prosvirin I.P.
, Cheng C.H.
, Chin A.
Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM
Microelectronic Engineering. 2015.
V.147. P.165-167. DOI: 10.1016/j.mee.2015.04.091
WOS
Scopus
РИНЦ
|