Gritsenko Vladimir Alekseevich

Identifiers

ORCID: 0000-0003-1646-0848

Affiliations

#	Name	Period	Items
1	Rzhanov Institute of Semiconductor Physics SB RAS	2002 - 2020	53
2	Novosibirsk State University	2015 - 2020	29
3	Novosibirsk State Technical University	2018 - 2020	18

Science activity

Articles in journal - 37 , Monography chapters - 1 , Conference attendances - 1

Articles in journal (37) More info

1	Perevalov T.V. , Gutakovskii A.K. , Kruchinin V.N. , Gritsenko V.A. , Prosvirin I.P. Atomic and Electronic Structure of Ferroelectric La-Doped HfO2 Films Materials Research Express. 2019. V.6. N3. 036403 :1-7. DOI: 10.1088/2053-1591/aaf436 Scopus WOS РИНЦ AN: 2019:836529
2	Gismatulin A.A. , Kruchinin V.N. , Gritsenko V.A. , Prosvirin I.P. , Yen T.-J. , Chin A. Charge Transport Mechanism of High-Resistive State in RRAM Based on SiOx Applied Physics Letters. 2019. V.114. N3. 033503 :1-5. DOI: 10.1063/1.5074116 Scopus WOS РИНЦ AN: 2019:196777
3	Lebedev M.S. , Kruchinin V.N. , Afonin M.Y. , Korolkov I.V. , Saraev A.A. , Gismatulin A.A. , Gritsenko V.A. Optical Properties and Charge Transport of Textured Sc2O3 Thin Flms Obtained by Atomic Layer Deposition Applied Surface Science. 2019. V.478. P.690-698. DOI: 10.1016/j.apsusc.2019.01.288 Scopus WOS РИНЦ AN: 2019:277094
4	Perevalov T.V. , Gritsenko V.A. , Gutakovskii A.K. , Prosvirin I.P. Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2019. V.109. N2. P.116-120. DOI: 10.1134/S0021364019020115 Scopus WOS РИНЦ AN: 2019:860542
5	Gritsenko V.A. , Kruchinin V.N. , Prosvirin I.P. , Novikov Y.N. , Chin A. , Volodin V.A. Atomic and Electronic Structures of a-SiNx:H Journal of Experimental and Theoretical Physics. 2019. V.129. N5. P.924-934. DOI: 10.1134/S1063776119080132 Scopus WOS AN: 2019:2469622
6	Perevalov T.V. , Volodin V.A. , Novikov Y.N. , Kamaev G.N. , Gritsenko V.A. , Prosvirin I.P. Nanosized Potential Fluctuations in SiOx Synthesized by Plasma-Enhanced Chemical Vapor Deposition Physics of the Solid State. 2019. V.61. N12. P.2560-2568. DOI: 10.1134/s1063783419120370 WOS AN: 2020:433305
7	Perevalov T.V. , Islamov D.R. , Gritsenko V.A. , Prosvirin I.P. Electronic Structure of Stoichiometric and Oxygen-Deficient Ferroelectric Hf0.5Zr0.5O2 Nanotechnology. 2018. V.29. N19. 194001 :1-8. DOI: 10.1088/1361-6528/aaacb1 WOS Scopus РИНЦ AN: 2018:2225744
8	Gritsenko V.A. , Perevalov T.V. , Voronkovskii V.A. , Gismatulin A.A. , Kruchinin V.N. , Aliev V.S. , Pustovarov V.A. , Prosvirin I.P. , Roizin Y. Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide ACS Applied Materials and Interfaces. 2018. V.10. N4. P.3769-3775. DOI: 10.1021/acsami.7b16753 WOS Scopus РИНЦ AN: 2018:44749
9	Perevalov T.V. , Gritsenko V.A. , Islamov D.R. , Prosvirin I.P. Electronic Structure of Oxygen Vacancies in the Orthorhombic Noncentrosymmetric Phase Hf0.5Zr0.5O2 Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2018. V.107. N1. P.55-60. DOI: 10.1134/S0021364018010071 WOS Scopus РИНЦ AN: 2018:435991
10	Perevalov T.V. , Gritsenko V.A. , Gismatulin A.A. , Voronkovskii V.A. , Gerasimova A.K. , Aliev V.S. , Prosvirin I.A. Electronic Structure and Charge Transport in Nonstoichiometric Tantalum Oxide Nanotechnology. 2018. V.29. N26. 264001 :1-9. DOI: 10.1088/1361-6528/aaba4c WOS Scopus РИНЦ AN: 2018:2376002
11	Gritsenko V.A. , Volodin V.A. , Perevalov T.V. , Kruchinin V.N. , Gerasimova A.K. , Aliev V.S. , Prosvirin I.P. Nanoscale Potential Fluctuations in Nonstoichiometrics Tantalum Oxide Nanotechnology. 2018. V.29. N42. 425202 :1-9. DOI: 10.1088/1361-6528/aad430 WOS Scopus РИНЦ AN: 2018:2458022
12	Gritsenko V.A. , Novikov Y.N. , Perevalov T.V. , Kruchinin V.N. , Aliev V.S. , Gerasimova A.K. , Erenburg S.B. , Trubina S.V. , Kvashnina K.O. , Prosvirin I.P. , Lanza M. Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization Advanced Electronic Materials. 2018. 1700592 :1-8. DOI: 10.1002/aelm.201700592 WOS Scopus РИНЦ AN: 2018:1320605
13	Gritsenko V.A. , Perevalov T.V. , Volodin V.A. , Kruchinin V.N. , Gerasimova A.K. , Prosvirin I.P. Atomic and Electronic Structures of Metal-Rich Noncentrosymmetric ZrOx Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2018. V.108. N4. P.226-230. DOI: 10.1134/s002136401816004x Scopus WOS РИНЦ AN: 2018:2231975
14	Kaichev V.V. , Smirnova T.P. , Yakovkina L.V. , Ivanova E.V. , Zamoryanskaya M.V. , Saraev A.A. , Pustovarov V.A. , Perevalov T.V. , Gritsenko V.A. Structure, Chemistry and Luminescence Properties of Dielectric LaxHf1-xOy Films Materials Chemistry and Physics. 2016. V.175. P.200-205. DOI: 10.1016/j.matchemphys.2016.03.019 WOS Scopus РИНЦ AN: 2016:485669 CAN: 164:490469
15	Perevalov T.V. , Islamov D.R. , Gritsenko V.A. , Saraev A.A. Electronic Structure of Oxygen Deficient Noncentrosymmetric Orthorhombic Hf0.5Zr0.5O2 ECS Transactions. 2016. V.75. N5. P.227-233. DOI: 10.1149/07505.0227ecst WOS Scopus РИНЦ AN: 2018:147464
16	Aliev V.S. , Gerasimova A.K. , Kruchinin V.N. , Gritsenko V.A. , Prosvirin I.P. , Badmaeva I.A. The Atomic Structure and Chemical Composition of HfOx (x<2) Films Prepared by Ion-Beam Sputtering Deposition Materials Research Express. 2016. V.3. P.085008-1-8. DOI: 10.1088/2053-1591/3/8/085008 WOS Scopus РИНЦ AN: 2016:1729247
17	Islamov D.R. , Kruchinin V.N. , Aliev V.S. , Perevalov T.V. , Gritsenko V.A. , Prosvirin I.P. , Orlov O.M. , Chin A. Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides Advances in Science and Technology. 2016. V.99. P.69-74. DOI: 10.4028/www.scientific.net/ast.99.69
18	Orlov O.M. , Krasnikov G.Y. , Gritsenko V.A. , Kruchinin V.N. , Perevalov T.V. , Aliev V.S. , Islamov D.R. , Prosvirin I.P. Nanoscale Potential Fluctuation in Non-Stoichiometric Hafnium Suboxides ECS Transactions. 2015. V.69. N5. P.237-241. DOI: 10.1149/06905.0237ecst Scopus РИНЦ AN: 2017:450480
19	Kruchinin V.N. , Aliev V.S. , Perevalov T.V. , Islamov D.R. , Gritsenko V.A. , Prosvirin I.P. , Cheng C.H. , Chin A. Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM Microelectronic Engineering. 2015. V.147. P.165-167. DOI: 10.1016/j.mee.2015.04.091 WOS Scopus РИНЦ AN: 2015:710806
20	Atuchin V.V. , Kaichev V.V. , Korolkov I.V. , Saraev A.A. , Troitskaia I.B. , Perevalov T.V. , Gritsenko V.A. Electronic Structure of Noncentrosymmetric α-GeO2 with Oxygen Vacancy: Ab Initio Calculations and Comparison with Experiment The Journal of Physical Chemistry C. 2014. V.118. N7. P.3644-3650. DOI: 10.1021/jp411751c WOS Scopus РИНЦ AN: 2014:146736 CAN: 160:287459
21	Perevalov T.V. , Aliev V.S. , Gritsenko V.A. , Saraev A.A. , Kaichev V.V. , Ivanova E.V. , Zamoryanskaya M.V. The Origin of 2.7 eV Luminescence and 5.2 eV Excitation Band in Hafnium Ooxide Applied Physics Letters. 2014. V.104. N7. P.071904-1-071904-5. DOI: 10.1063/1.4865259 WOS Scopus РИНЦ AN: 2014:338722 CAN: 160:436155
22	Kaichev V.V. , Ivanova E.V. , Zamoryanskaya M.V. , Smirnova T.P. , Yakovkina L.V. , Gritsenko V.A. XPS and Cathodoluminescence Studies of HfO2, Sc2O3 and (HfO2)1-x(Sc2O3)x Films The European Physical Journal - Applied Physics. 2013. V.64. N1. P.10302-1-4. DOI: 10.1051/epjap/2013130005 WOS Scopus РИНЦ AN: 2013:1828504 CAN: 160:700552
23	Perevalov T.V. , Aliev V.S. , Gritsenko V.A. , Saraev A.A. , Kaichev V.V. Electronic Structure of Oxygen Vacancies in Hafnium Oxide Microelectronic Engineering. 2013. V.109. P.21-23. DOI: 10.1016/j.mee.2013.03.005 WOS Scopus РИНЦ AN: 2013:854162 CAN: 159:477386
24	Kaichev V.V. , Asanova T.I. , Erenburg S.B. , Perevalov T.V. , Shvets V.A. , Gritsenko V.A. Atomic and Electronic Structures of Lutetium Oxide Lu2O3 Journal of Experimental and Theoretical Physics. 2013. V.116. N2. P.323-329. DOI: 10.1134/S1063776113020131 WOS Scopus РИНЦ AN: 2013:406042 CAN: 159:239882
25	Ivanov M.V. , Perevalov T.V. , Aliev V.S. , Gritsenko V.A. , Kaichev V.V. Electronic Structure of δ-Ta2O5 with Oxygen Vacancy: ab initio Calculations and Comparison with Experiment Journal of Applied Physics. 2011. V.110. P.024115-1 - 024115-5. DOI: 10.1063/1.3606416 WOS Scopus РИНЦ AN: 2011:945990 CAN: 155:223874
26	Ivanov M.V. , Perevalov T.V. , Aliev V.S. , Gritsenko V.A. , Kaichev V.V. Ab initio Simulation of the Electronic Structure of δ-Ta2O5 with Oxygen Vacancy and Comparison with Experiment Journal of Experimental and Theoretical Physics. 2011. V.112. N6. P.1035-1041. DOI: 10.1134/S1063776111050037 WOS Scopus РИНЦ AN: 2011:877699 CAN: 156:407236
27	Perevalov T.V. , Gritsenko V.A. , Kaichev V.V. Electronic Structure of Aluminum Oxide: Ab initio Simulations of α and γ Phases and Comparison with Experiment for Amorphous Films The European Physical Journal - Applied Physics. 2010. V.52. N3. P.30501. DOI: 10.1051/epjap/2010159 WOS Scopus РИНЦ AN: 2011:185067 CAN: 157:88432
28	Smirnova T.P. , Kaichev V.V. , Yakovkina L.V. , Kosyakov V.I. , Beloshapkin S.A. , Kuznetsov F.A. , Lebedev M.S. , Gritsenko V.A. Composition and Structure of Hafnia Films on Silicon Inorganic Materials. 2008. V.44. N9. P.965-970. DOI: 10.1134/S0020168508090124 WOS Scopus РИНЦ AN: 2008:1055854 CAN: 150:110130
29	Shvets V.A. , Aliev V.S. , Gritsenko D.V. , Shaimeev S.S. , Fedosenko E.V. , Rykhlitski S.V. , Atuchin V.V. , Gritsenko V.A. , Tapilin V.M. , Wong H. Electronic Structure and Charge Transport Properties of Amorphous Ta2O5 Films Journal of Non-Crystalline Solids. 2008. V.354. N26. P.3025-3033. DOI: 10.1016/j.jnoncrysol.2007.12.013 WOS Scopus РИНЦ AN: 2008:575174 CAN: 149:138441
30	Gritsenko V. , Gritsenko D. , Shaimeev S. , Aliev V. , Nasyrov K. , Erenburg S. , Tapilin V. , Wong H. , Poon M.C. , Lee J.H. , Lee J.-W. , Kim C.W. Atomic and Electronic Structures of Amorphous ZrO2 and HfO 2 Films Microelectronic Engineering. 2005. V.81. N2-4. P.524-529. DOI: 10.1016/j.mee.2005.03.056 WOS Scopus РИНЦ AN: 2005:733450 CAN: 144:264300
31	Patrakov A.E. , Gritsenko V.A. , Zhidomirov G.M. Interaction with Charge Carriers and the Optical Absorption Spectrum of an Associate Formed by Elementary Defects (an Oxygen Vacancy and a Silylene Center) in SiO2 Physics of the Solid State. 2004. V.46. N11. P.2021-2025. DOI: 10.1134/1.1825543 WOS Scopus РИНЦ AN: 2004:967600 CAN: 143:123870
32	Gritsenko V.A. , Shaposhnikov A.V. , Novikov Y.N. , Baraban A.P. , Wong H. , Zhidomirov G.M. , Roger M. Onefold Coordinated Oxygen Atom: An Electron Trap in the Silicon Oxide Microelectronics Reliability. 2003. V.43. N4. P.665-669. DOI: 10.1016/S0026-2714(03)00030-1 WOS Scopus РИНЦ AN: 2003:380541 CAN: 140:102658
33	Gritsenko V.A. , Novikov Y.N. , Shaposhnikov A.V. , Wong H. , Zhidomirov G.M. Capturing Properties of a Threefold Coordinated Silicon Atom in Silicon Nitride: Positive Correlation Energy Model Physics of the Solid State. 2003. V.45. N11. P.2031-2035. DOI: 10.1134/1.1626733 WOS Scopus РИНЦ AN: 2003:896620 CAN: 140:187802
34	Gritsenko V.A. , Shaposhnikov A.V. , Kwok W.M. , Wong H. , Jidomirov G.M. Valence Band Offset at Silicon/Silicon Nitride and Silicon Nitride/Silicon Oxide Interfaces Thin Solid Films. 2003. V.437. N1-2. P.135-139. DOI: 10.1016/S0040-6090(03)00601-1 WOS Scopus РИНЦ AN: 2003:539403 CAN: 139:314997
35	Gritsenko V.A. , Novikov Y.N. , Shaposhnikov A.V. , Wong H. , Zhidomirov G.M. Capturing Properties of Three-Fold Coordinated Silicon Atom in Silicon Nitride: A Positive Correlation Energy Model Физика твердого тела. 2003. V.45. N11. P.1934-1937. РИНЦ
36	Shaposhnikov A.V. , Gritsenko V.A. , Zhidomirov G.M. , Roger M. Hole Trapping on the Twofold-Coordinated Silicon Atom in SiO2 Physics of the Solid State. 2002. V.44. N6. P.1028-1030. DOI: 10.1134/1.1485002 WOS Scopus РИНЦ AN: 2002:433536 CAN: 137:208961
37	Gritsenko V.A. , Shaposhnikov A.V. , Zhidomirov G.M. , Roger M. Two Fold Coordinated Silicon Atom: A Hole Trap in SiO2 Solid State Communications. 2002. V.121. N6-7. P.301-304. DOI: 10.1016/S0038-1098(02)00022-4 WOS Scopus РИНЦ AN: 2002:136773 CAN: 136:287083

Monography chapters (1) More info

Islamov D.R. , Perevalov T.V. , Gritsenko V.A. , Aliev V.S. , Saraev A.A. , Kaichev V.V. , Ivanova E.V. , Zamoryanskaya M.V. , Chin A.
20 – The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element
Monography chapter Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. – Elsevier Inc., 2016. – C.493-504. – ISBN 9780128105122. DOI: 10.1016/B978-0-12-810512-2.00020-2 WOS Scopus РИНЦ AN: 2019:2498278

Conference attendances (1) More info

1	Orlov O.M. , Krasnikov G.Y. , Griczenko V.A. , Kruchinin V.N. , Perevalov T.V. , Aliev V.S. , Islamov D.R. , Prosvirin I.P. Nanoscale Potential Fluctuation in Non-Stoichiometric Hafnium Suboxides 228th Fall Meeting of Electrochemical Society (ECS 2015 Phoenix) 11-15 Oct 2015