Aliev Vladimir Shakirovich | Sciact - CRIS-system of Boreskov Institute of Catalysis - publications, employee

Aliev Vladimir Shakirovich

Identifiers

AuthorIdentifierType.ORCID: 0000-0002-4266-971X

Affiliations

#	Name	Period	Items
1	Rzhanov Institute of Semiconductor Physics SB RAS	1992 - 2018	25
2	Boreskov Institute of Catalysis SB RAS	2007 - 2009	2

Science activity

Articles in journal - 17 , Monography chapters - 1 , Conference attendances - 1

Articles in journal (17) More info

1	Gritsenko V.A. , Perevalov T.V. , Voronkovskii V.A. , Gismatulin A.A. , Kruchinin V.N. , Aliev V.S. , Pustovarov V.A. , Prosvirin I.P. , Roizin Y. Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide ACS Applied Materials and Interfaces. 2018. V.10. N4. P.3769-3775. DOI: 10.1021/acsami.7b16753 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2018:44749
2	Perevalov T.V. , Gritsenko V.A. , Gismatulin A.A. , Voronkovskii V.A. , Gerasimova A.K. , Aliev V.S. , Prosvirin I.A. Electronic Structure and Charge Transport in Nonstoichiometric Tantalum Oxide Nanotechnology. 2018. V.29. N26. 264001 :1-9. DOI: 10.1088/1361-6528/aaba4c PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2018:2376002
3	Gritsenko V.A. , Volodin V.A. , Perevalov T.V. , Kruchinin V.N. , Gerasimova A.K. , Aliev V.S. , Prosvirin I.P. Nanoscale Potential Fluctuations in Nonstoichiometrics Tantalum Oxide Nanotechnology. 2018. V.29. N42. 425202 :1-9. DOI: 10.1088/1361-6528/aad430 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2018:2458022
4	Gritsenko V.A. , Novikov Y.N. , Perevalov T.V. , Kruchinin V.N. , Aliev V.S. , Gerasimova A.K. , Erenburg S.B. , Trubina S.V. , Kvashnina K.O. , Prosvirin I.P. , Lanza M. Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization Advanced Electronic Materials. 2018. 1700592 :1-8. DOI: 10.1002/aelm.201700592 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2018:1320605
5	Aliev V.S. , Gerasimova A.K. , Kruchinin V.N. , Gritsenko V.A. , Prosvirin I.P. , Badmaeva I.A. The Atomic Structure and Chemical Composition of HfOx (x<2) Films Prepared by Ion-Beam Sputtering Deposition Materials Research Express. 2016. V.3. P.085008-1-8. DOI: 10.1088/2053-1591/3/8/085008 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2016:1729247
6	Islamov D.R. , Kruchinin V.N. , Aliev V.S. , Perevalov T.V. , Gritsenko V.A. , Prosvirin I.P. , Orlov O.M. , Chin A. Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides Advances in Science and Technology. 2016. V.99. P.69-74. DOI: 10.4028/www.scientific.net/ast.99.69
7	Orlov O.M. , Krasnikov G.Y. , Gritsenko V.A. , Kruchinin V.N. , Perevalov T.V. , Aliev V.S. , Islamov D.R. , Prosvirin I.P. Nanoscale Potential Fluctuation in Non-Stoichiometric Hafnium Suboxides ECS Transactions. 2015. V.69. N5. P.237-241. DOI: 10.1149/06905.0237ecst PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2017:450480
8	Kruchinin V.N. , Aliev V.S. , Perevalov T.V. , Islamov D.R. , Gritsenko V.A. , Prosvirin I.P. , Cheng C.H. , Chin A. Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM Microelectronic Engineering. 2015. V.147. P.165-167. DOI: 10.1016/j.mee.2015.04.091 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2015:710806
9	Perevalov T.V. , Aliev V.S. , Gritsenko V.A. , Saraev A.A. , Kaichev V.V. , Ivanova E.V. , Zamoryanskaya M.V. The Origin of 2.7 eV Luminescence and 5.2 eV Excitation Band in Hafnium Ooxide Applied Physics Letters. 2014. V.104. N7. P.071904-1-071904-5. DOI: 10.1063/1.4865259 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2014:338722 PublicationIdentifierType_short.CAN: 160:436155
10	Perevalov T.V. , Aliev V.S. , Gritsenko V.A. , Saraev A.A. , Kaichev V.V. Electronic Structure of Oxygen Vacancies in Hafnium Oxide Microelectronic Engineering. 2013. V.109. P.21-23. DOI: 10.1016/j.mee.2013.03.005 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2013:854162 PublicationIdentifierType_short.CAN: 159:477386
11	Ivanov M.V. , Perevalov T.V. , Aliev V.S. , Gritsenko V.A. , Kaichev V.V. Electronic Structure of δ-Ta2O5 with Oxygen Vacancy: ab initio Calculations and Comparison with Experiment Journal of Applied Physics. 2011. V.110. P.024115-1 - 024115-5. DOI: 10.1063/1.3606416 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2011:945990 PublicationIdentifierType_short.CAN: 155:223874
12	Ivanov M.V. , Perevalov T.V. , Aliev V.S. , Gritsenko V.A. , Kaichev V.V. Ab initio Simulation of the Electronic Structure of δ-Ta2O5 with Oxygen Vacancy and Comparison with Experiment Journal of Experimental and Theoretical Physics. 2011. V.112. N6. P.1035-1041. DOI: 10.1134/S1063776111050037 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2011:877699 PublicationIdentifierType_short.CAN: 156:407236
13	Atuchin V.V. , Kruchinin V.N. , Kalinkin A.V. , Aliev V.S. , Rykhlitskii S.V. , Shvets V.A. , Spesivtsev E.V. Optical Properties of the HfO2 – xNx and TiO2 – xNx Films Prepared by Ion Beam Sputtering Optics and Spectroscopy. 2009. V.106. N1. P.72-77. DOI: 10.1134/S0030400X09010093 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2009:142213 PublicationIdentifierType_short.CAN: 151:346729
14	Shvets V.A. , Aliev V.S. , Gritsenko D.V. , Shaimeev S.S. , Fedosenko E.V. , Rykhlitski S.V. , Atuchin V.V. , Gritsenko V.A. , Tapilin V.M. , Wong H. Electronic Structure and Charge Transport Properties of Amorphous Ta2O5 Films Journal of Non-Crystalline Solids. 2008. V.354. N26. P.3025-3033. DOI: 10.1016/j.jnoncrysol.2007.12.013 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2008:575174 PublicationIdentifierType_short.CAN: 149:138441
15	Ramana C.V. , Utsunomiya S. , Ewing R. , Becker U. , Atuchin V.V. , Aliev V.S. , Kruchinin V.N. Spectroscopic Ellipsometry Characterization of the Optical Properties and Thermal Stability of Zr O2 Films Made by Ion-Beam Assisted Deposition Applied Physics Letters. 2008. V.92. N1. P.011917. DOI: 10.1063/1.2811955 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2008:112105 PublicationIdentifierType_short.CAN: 148:271681
16	Atuchin V.V. , Aliev V.S. , Kruchinin V.N. , Ramana C.V. Optical Properties and Micromorphology of ZrO2/Si Films Created by Ion Beam Sputtering Deposition Фундаментальные проблемы современного материаловедения. 2007. V.4. N3. P.62-65. PublicationIdentifierType_short.RINZ
17	Gritsenko V. , Gritsenko D. , Shaimeev S. , Aliev V. , Nasyrov K. , Erenburg S. , Tapilin V. , Wong H. , Poon M.C. , Lee J.H. , Lee J.-W. , Kim C.W. Atomic and Electronic Structures of Amorphous ZrO2 and HfO 2 Films Microelectronic Engineering. 2005. V.81. N2-4. P.524-529. DOI: 10.1016/j.mee.2005.03.056 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2005:733450 PublicationIdentifierType_short.CAN: 144:264300

Monography chapters (1) More info

1

Islamov D.R. , Perevalov T.V. , Gritsenko V.A. , Aliev V.S. , Saraev A.A. , Kaichev V.V. , Ivanova E.V. , Zamoryanskaya M.V. , Chin A.
20 – The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element
Monography chapter Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. – Elsevier Inc., 2016. – C.493-504. – ISBN 9780128105122. DOI: 10.1016/B978-0-12-810512-2.00020-2 PublicationIdentifierType_short.WOS PublicationIdentifierType_short.SCOPUS PublicationIdentifierType_short.RINZ PublicationIdentifierType_short.AN: 2019:2498278

Conference attendances (1) More info

1	Orlov O.M. , Krasnikov G.Y. , Griczenko V.A. , Kruchinin V.N. , Perevalov T.V. , Aliev V.S. , Islamov D.R. , Prosvirin I.P. Nanoscale Potential Fluctuation in Non-Stoichiometric Hafnium Suboxides 228th Fall Meeting of Electrochemical Society (ECS 2015 Phoenix) 11-15 Oct 2015