1
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Bukhtiyarov A.V.
,
Bukhtiyarov V.I.
,
Nikolenko A.D.
,
Prosvirin I.P.
,
Kvon R.I.
,
Tereshchenko O.E.
“Electronic Structure” Beamline 1-6 at SKIF Synchrotron Facility
AIP Conference Proceedings. 2020.
V.2299. N1. 060003
:1-5. DOI: 10.1063/5.0030740
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2
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Kaveev A.K.
,
Sokolov N.S.
,
Suturin S.M.
,
Zhiltsov N.S.
,
Golyashov V.A.
,
Kokh K.A.
,
Prosvirin I.P.
,
Tereshchenko O.E.
,
Sawada M.
Crystalline Structure and Magnetic Properties of Structurally Ordered Cobalt–Iron Alloys Grown on Bi-Containing Topological Insulators and Systems with Giant Rashba Splitting
CrystEngComm. 2018.
V.20. N24. P.3419-3427. DOI: 10.1039/c8ce00326b
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3
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Zhuravlev K.S.
,
Malin T.V.
,
Mansurov V.G.
,
Tereshenko O.E.
,
Abgaryan K.K.
,
Reviznikov D.L.
,
Zemlyakov V.E.
,
Egorkin V.I.
,
Parnes Y.M.
,
Tikhomirov V.G.
,
Prosvirin I.P.
AlN/GaN Heterostructures for Normally-Off Transistors
Semiconductors. 2017.
V.51. N3. P.379-386. DOI: 10.1134/S1063782617030277
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publication_identifier_short.scopus_identifier_type
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4
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Atuchin V.V.
,
Golyashov V.A.
,
Kokh K.A.
,
Korolkov I.V.
,
Kozhukhov A.S.
,
Kruchinin V.N.
,
Loshkarev I.D.
,
Pokrovsky L.D.
,
Prosvirin I.P.
,
Romanyuk K.N.
,
Tereshchenko O.E.
Crystal Growth of Bi2Te3 and Noble Cleaved (0001) Surface Properties
Journal of Solid State Chemistry. 2016.
V.236. P.203-208. DOI: 10.1016/j.jssc.2015.07.031
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publication_identifier_short.scopus_identifier_type
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5
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Aksenov M.S.
,
Kokhanovskii A.Y.
,
Polovodov P.A.
,
Devyatova S.F.
,
Golyashov V.A.
,
Kozhukhov A.S.
,
Prosvirin I.P.
,
Khandarkhaeva S.E.
,
Gutakovskii A.K.
,
Valisheva N.A.
,
Tereshсhenko O.E.
InAs-Based Metal-Oxide-Semiconductor Structure Formation in Low-Energy Townsend Discharge
Applied Physics Letters. 2015.
V.107. N17. P.173501-1-173501-5. DOI: 10.1063/1.4934745
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publication_identifier_short.scopus_identifier_type
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6
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Tereshchenko O.E.
,
Golyashov V.A.
,
Eremeev S.V.
,
Maurin I.
,
Bakulin A.V.
,
Kulkova S.E.
,
Aksenov M.S.
,
Preobrazhenskii V.V.
,
Putyato M.A.
,
Semyagin B.R.
,
Dmitriev D.V.
,
Toropov A.I.
,
Gutakovskii A.K.
,
Khandarkhaeva S.E.
,
Prosvirin I.P.
,
Kalinkin A.V.
,
Bukhtiyarov V.I.
,
Latyshev A.V.
Ferromagnetic HfO2/Si/GaAs Interface for Spin-Polarimetry Applications
Applied Physics Letters. 2015.
V.107. 123506
:1-5. DOI: 10.1063/1.4931944
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publication_identifier_short.scopus_identifier_type
publication_identifier_short.rinz_identifier_type
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7
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Valisheva N.A.
,
Aksenov M.S.
,
Golyashov V.A.
,
Levtsova T.A.
,
Kovchavtsev A.P.
,
Gutakovskii A.K.
,
Khandarkhaeva S.E.
,
Kalinkin A.V.
,
Prosvirin I.P.
,
Bukhtiyarov V.I.
,
Tereshchenko O.E.
Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation
Applied Physics Letters. 2014.
V.105. P.161601-161605. DOI: 10.1063/1.4899137
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8
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Golyashov V.A.
,
Kokh K.A.
,
Makarenko S.V.
,
Romanyuk K.N.
,
Prosvirin I.P.
,
Kalinkin A.V.
,
Tereshchenko O.E.
,
Kozhukhov A.S.
,
Sheglov D.V.
,
Eremeev S.V.
,
Borisova S.D.
,
Chulkov E.V.
Inertness and Degradation of (0001) Surface of Bi2Se3 Topological Insulator
Journal of Applied Physics. 2012.
V.112. N11. P.113702. DOI: 10.1063/1.4767458
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publication_identifier_short.rinz_identifier_type
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9
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Valisheva N.A.
,
Tereshchenko O.E.
,
Prosvirin I.P.
,
Kalinkin A.V.
,
Goljashov V.A.
,
Levtzova T.A.
,
Bukhtiyarov V.I.
Formation of Anodic Layers on InAs (111)III. Study of the Chemical Composition
Semiconductors. 2012.
V.46. N4. P.552-558. DOI: 10.1134/S1063782612040239
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10
|
Tereshhenko O.E.
,
Paulish A.G.
,
Neklyudova M.A.
,
Shamirzaev T.S.
,
Yaroshevich A.S.
,
Prosvirin I.P.
,
Zhaksylykova I.
,
Dmitriev D.V.
,
Toropov A.I.
,
Varnakov S.N.
,
Rautskii M.V.
,
Volkov N.V.
,
Ovchinnikov S.G.
,
Latyshev A.V.
Forming Interface in Pd/Fe/GaAs/InGaAs Structure for Optical Detector of Free-Electron Spin
Technical Physics Letters. 2012.
V.38. N1. P.12-16. DOI: 10.1134/S1063785012010154
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publication_identifier_short.scopus_identifier_type
publication_identifier_short.rinz_identifier_type
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11
|
Tereshchenko O.E.
,
Kokh K.A.
,
Atuchin V.V.
,
Romanyuk K.N.
,
Makarenko S.V.
,
Golyashov V.A.
,
Kozhukhov A.S.
,
Prosvirin I.P.
,
Shklyaev A.A.
Stability of the (0001) Surface of the Bi2Se3 Topological Insulator
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2011.
V.94. N6. P.465-468. DOI: 10.1134/S0021364011180159
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publication_identifier_short.scopus_identifier_type
publication_identifier_short.rinz_identifier_type
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12
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Atuchin V.V.
,
Golyashov V.A.
,
Kokh K.A.
,
Korolkov I.V.
,
Kozhukhov A.S.
,
Kruchinin V.N.
,
Makarenko S.V.
,
Pokrovsky L.D.
,
Prosvirin I.P.
,
Romanyuk K.N.
,
Tereshhenko O.E.
Formation of Inert Bi2Se3(0001) Cleaved Surface
Crystal Growth and Design. 2011.
V.11. N12. P.5507-5514. DOI: 10.1021/cg201163v
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publication_identifier_short.scopus_identifier_type
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13
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Valisheva N.A.
,
Tereshchenko O.E.
,
Prosvirin I.P.
,
Levtsova T.A.
,
Rodjakina E.E.
,
Kovchavcev A.V.
Composition and Morphology of Fluorinated Anodic Oxides on InAs (1 1 1)A Surface
Applied Surface Science. 2010.
V.256. N19. P.5722-5726. DOI: 10.1016/j.apsusc.2010.03.100
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