Gutakovskii A. K.

Affiliations

#	Name	Period	Items
1	Rzhanov Institute of Semiconductor Physics SB RAS	1998 - 2020	19
2	Novosibirsk National Research University	2014 - 2020	6
3	M. A. Lavrentyv Institute of Hydrodynamics SB RAS	1995	1

Science activity

Articles in journal - 13 , Articles in compilations - 1

Articles in journal (13) More info

1	Timofeev V. , Mashanov V. , Nikiforov A. , Skvortsov I. , Gavrilova T. , Gulyaev D. , Gutakovskii A. , Chetyrin I. Effect of Sn for the Dislocation-free SiSn Nanostructure Formation on the Vapor-Liquid-Crystal Mechanism AIP Advances. 2020. V.10. N1. 015309 :1-7. DOI: 10.1063/1.5139936 WOS Scopus РИНЦ
2	Perevalov T.V. , Gutakovskii A.K. , Kruchinin V.N. , Gritsenko V.A. , Prosvirin I.P. Atomic and Electronic Structure of Ferroelectric La-Doped HfO2 Films Materials Research Express. 2019. V.6. N3. 036403 :1-7. DOI: 10.1088/2053-1591/aaf436 WOS Scopus РИНЦ
3	Perevalov T.V. , Gritsenko V.A. , Gutakovskii A.K. , Prosvirin I.P. Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2019. V.109. N2. P.116-120. DOI: 10.1134/S0021364019020115 WOS Scopus РИНЦ
4	Zakirov E.R. , Kesler V.G. , Sidorov G.Y. , Prosvirin I.P. , Gutakovsky A.K. , Vdovin V.I. XPS Investigation of the ALD Al2O3/HgCdTe Heterointerface Semiconductor Science and Technology. 2019. V.34. N6. 065007 :1-6. DOI: 10.1088/1361-6641/ab1961 WOS Scopus РИНЦ
5	Aksenov M.S. , Gutakovskii A.K. , Prosvirin I.P. , Dmitriev D.V. , Nedomolkina A.A. , Valisheva N.A. Anodic Layer Formation on the InAlAs Surface in Townsend Gas-Discharge Plasma Materials Science in Semiconductor Processing. 2019. V.102. 104611 :1-5. DOI: 10.1016/j.mssp.2019.104611 WOS Scopus РИНЦ
6	Chistokhin I.B. , Aksenov M.S. , Valisheva N.A. , Dmitriev D.V. , Kovchavtsev A.P. , Gutakovskii A.K. , Prosvirin I.P. , Zhuravlev K.S. Barrier Characteristics and Interface Properties of Au/Ti/n-InAlAs Schottky Contacts Materials Science in Semiconductor Processing. 2018. V.74. P.193-198. DOI: 10.1016/j.mssp.2017.10.014 WOS Scopus РИНЦ
7	Aksenov M.S. , Kokhanovskii A.Y. , Polovodov P.A. , Devyatova S.F. , Golyashov V.A. , Kozhukhov A.S. , Prosvirin I.P. , Khandarkhaeva S.E. , Gutakovskii A.K. , Valisheva N.A. , Tereshсhenko O.E. InAs-Based Metal-Oxide-Semiconductor Structure Formation in Low-Energy Townsend Discharge Applied Physics Letters. 2015. V.107. N17. P.173501-1-173501-5. DOI: 10.1063/1.4934745 WOS Scopus РИНЦ
8	Tereshchenko O.E. , Golyashov V.A. , Eremeev S.V. , Maurin I. , Bakulin A.V. , Kulkova S.E. , Aksenov M.S. , Preobrazhenskii V.V. , Putyato M.A. , Semyagin B.R. , Dmitriev D.V. , Toropov A.I. , Gutakovskii A.K. , Khandarkhaeva S.E. , Prosvirin I.P. , Kalinkin A.V. , Bukhtiyarov V.I. , Latyshev A.V. Ferromagnetic HfO2/Si/GaAs Interface for Spin-Polarimetry Applications Applied Physics Letters. 2015. V.107. 123506 :1-5. DOI: 10.1063/1.4931944 WOS Scopus РИНЦ
9	Valisheva N.A. , Aksenov M.S. , Golyashov V.A. , Levtsova T.A. , Kovchavtsev A.P. , Gutakovskii A.K. , Khandarkhaeva S.E. , Kalinkin A.V. , Prosvirin I.P. , Bukhtiyarov V.I. , Tereshchenko O.E. Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation Applied Physics Letters. 2014. V.105. P.161601-161605. DOI: 10.1063/1.4899137 WOS Scopus РИНЦ
10	Abramkin D.S. , Shamirzaev V.T. , Putyato M.A. , Gutakovskii A.K. , Shamirzaev T.S. Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots Письма в Журнал экспериментальной и теоретической физики. 2014. V.99. N2. P.81-86. DOI: 10.7868/S0370274X14020040 РИНЦ
11	Abramkin D.S. , Shamirzaev V.T. , Putyuto M.A. , Gutakovskii A.K. , Shamirzaev T.S. Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2014. V.99. N2. P.76-81. DOI: 10.1134/S0021364014020027 WOS Scopus РИНЦ
12	Stenina N.G. , Gubareva D.B. , Gutakovskii A.K. , Plyasova L.M. Crystal Chemical Features of Vein Quartz from the Saralinsk Deposit as an Indicator of the Productivity of Gold Mineralization (Kuznetsk Alatau, Russia) Geology of Ore Deposits. 2000. V.42. N1. P.47-56. WOS Scopus РИНЦ
13	Kuznetsov V.L. , Chuvilin A.L. , Butenko Y.V. , Stankus S.V. , Khairulin R.A. , Gutakovskii A.K. Closed Curved Graphite-Like Structures Formation on Micron-Size Diamond Chemical Physics Letters. 1998. V.289. N3-4. P.353-360. DOI: 10.1016/S0009-2614(98)00425-4 WOS Scopus РИНЦ

Articles in compilations (1) More info

Kuznetsov V.L. , Chuvilin A.L. , Butenko Y.V. , Mal'kov I.Y. , Gutakovskii A.K. , Stankus S.V. , Khairulin R.A.
Study of Onion-Like Carbon (OLC) Formation from Ultra Disperse Diamond (UDD)
In compilation Science and technology of fullerene materials: symposium held November 28-December 2, 1994 Boston, Massachusetts, U.S.A (Materials Research Society Symposium Proceedings. Vol. 359). – Materials Research Society., 1995. – C.105-110. – ISBN 155899260X. DOI: 10.1557/PROC-359-105 WOS Scopus РИНЦ