1
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Timofeev V.
,
Mashanov V.
,
Nikiforov A.
,
Skvortsov I.
,
Gavrilova T.
,
Gulyaev D.
,
Gutakovskii A.
,
Chetyrin I.
Effect of Sn for the Dislocation-free SiSn Nanostructure Formation on the Vapor-Liquid-Crystal Mechanism
AIP Advances. 2020.
V.10. N1. 015309
:1-7. DOI: 10.1063/1.5139936
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publication_identifier_short.scopus_identifier_type
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2
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Perevalov T.V.
,
Gutakovskii A.K.
,
Kruchinin V.N.
,
Gritsenko V.A.
,
Prosvirin I.P.
Atomic and Electronic Structure of Ferroelectric La-Doped HfO2 Films
Materials Research Express. 2019.
V.6. N3. 036403
:1-7. DOI: 10.1088/2053-1591/aaf436
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publication_identifier_short.scopus_identifier_type
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3
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Perevalov T.V.
,
Gritsenko V.A.
,
Gutakovskii A.K.
,
Prosvirin I.P.
Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2019.
V.109. N2. P.116-120. DOI: 10.1134/S0021364019020115
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4
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Zakirov E.R.
,
Kesler V.G.
,
Sidorov G.Y.
,
Prosvirin I.P.
,
Gutakovsky A.K.
,
Vdovin V.I.
XPS Investigation of the ALD Al2O3/HgCdTe Heterointerface
Semiconductor Science and Technology. 2019.
V.34. N6. 065007
:1-6. DOI: 10.1088/1361-6641/ab1961
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5
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Aksenov M.S.
,
Gutakovskii A.K.
,
Prosvirin I.P.
,
Dmitriev D.V.
,
Nedomolkina A.A.
,
Valisheva N.A.
Anodic Layer Formation on the InAlAs Surface in Townsend Gas-Discharge Plasma
Materials Science in Semiconductor Processing. 2019.
V.102. 104611
:1-5. DOI: 10.1016/j.mssp.2019.104611
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6
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Chistokhin I.B.
,
Aksenov M.S.
,
Valisheva N.A.
,
Dmitriev D.V.
,
Kovchavtsev A.P.
,
Gutakovskii A.K.
,
Prosvirin I.P.
,
Zhuravlev K.S.
Barrier Characteristics and Interface Properties of Au/Ti/n-InAlAs Schottky Contacts
Materials Science in Semiconductor Processing. 2018.
V.74. P.193-198. DOI: 10.1016/j.mssp.2017.10.014
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7
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Aksenov M.S.
,
Kokhanovskii A.Y.
,
Polovodov P.A.
,
Devyatova S.F.
,
Golyashov V.A.
,
Kozhukhov A.S.
,
Prosvirin I.P.
,
Khandarkhaeva S.E.
,
Gutakovskii A.K.
,
Valisheva N.A.
,
Tereshсhenko O.E.
InAs-Based Metal-Oxide-Semiconductor Structure Formation in Low-Energy Townsend Discharge
Applied Physics Letters. 2015.
V.107. N17. P.173501-1-173501-5. DOI: 10.1063/1.4934745
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8
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Tereshchenko O.E.
,
Golyashov V.A.
,
Eremeev S.V.
,
Maurin I.
,
Bakulin A.V.
,
Kulkova S.E.
,
Aksenov M.S.
,
Preobrazhenskii V.V.
,
Putyato M.A.
,
Semyagin B.R.
,
Dmitriev D.V.
,
Toropov A.I.
,
Gutakovskii A.K.
,
Khandarkhaeva S.E.
,
Prosvirin I.P.
,
Kalinkin A.V.
,
Bukhtiyarov V.I.
,
Latyshev A.V.
Ferromagnetic HfO2/Si/GaAs Interface for Spin-Polarimetry Applications
Applied Physics Letters. 2015.
V.107. 123506
:1-5. DOI: 10.1063/1.4931944
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publication_identifier_short.rinz_identifier_type
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9
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Valisheva N.A.
,
Aksenov M.S.
,
Golyashov V.A.
,
Levtsova T.A.
,
Kovchavtsev A.P.
,
Gutakovskii A.K.
,
Khandarkhaeva S.E.
,
Kalinkin A.V.
,
Prosvirin I.P.
,
Bukhtiyarov V.I.
,
Tereshchenko O.E.
Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation
Applied Physics Letters. 2014.
V.105. P.161601-161605. DOI: 10.1063/1.4899137
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10
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Abramkin D.S.
,
Shamirzaev V.T.
,
Putyato M.A.
,
Gutakovskii A.K.
,
Shamirzaev T.S.
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Письма в Журнал экспериментальной и теоретической физики. 2014.
V.99. N2. P.81-86. DOI: 10.7868/S0370274X14020040
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11
|
Abramkin D.S.
,
Shamirzaev V.T.
,
Putyuto M.A.
,
Gutakovskii A.K.
,
Shamirzaev T.S.
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2014.
V.99. N2. P.76-81. DOI: 10.1134/S0021364014020027
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12
|
Stenina N.G.
,
Gubareva D.B.
,
Gutakovskii A.K.
,
Plyasova L.M.
Crystal Chemical Features of Vein Quartz from the Saralinsk Deposit as an Indicator of the Productivity of Gold Mineralization (Kuznetsk Alatau, Russia)
Geology of Ore Deposits. 2000.
V.42. N1. P.47-56.
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13
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Kuznetsov V.L.
,
Chuvilin A.L.
,
Butenko Y.V.
,
Stankus S.V.
,
Khairulin R.A.
,
Gutakovskii A.K.
Closed Curved Graphite-Like Structures Formation on Micron-Size Diamond
Chemical Physics Letters. 1998.
V.289. N3-4. P.353-360. DOI: 10.1016/S0009-2614(98)00425-4
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publication_identifier_short.scopus_identifier_type
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