Onefold Coordinated Oxygen Atom: An Electron Trap in the Silicon Oxide Научная публикация
Журнал |
Microelectronics Reliability
ISSN: 0026-2714 |
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Вых. Данные | Год: 2003, Том: 43, Номер: 4, Страницы: 665-669 Страниц : 5 DOI: 10.1016/S0026-2714(03)00030-1 | ||||||||||
Ключевые слова | Crystal defects; Electron traps; Gates (transistor); Silica | ||||||||||
Авторы |
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Организации |
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Информация о финансировании (1)
1 | International Association for the Promotion of Co-operation with Scientists from the New Independent States of the Former Soviet Union | 97-0347 |
Реферат:
It has been long suggested that the dropSiOH defect is an electron or "water" trap in silicon dioxide based on some indirect evidences. In this work, quantum calculation on the capturing properties of non-bridging oxygen hole center with unpaired electron dropSiO and hydrogen defect SiOH in silicon oxide are performed with the ab initio density-functional method. It was found that the dropSiO defect is an electron trap and this defect should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. We found that the dropSiOH defect could not be an electron trap according to the present calculation results.
Библиографическая ссылка:
Gritsenko V.A.
, Shaposhnikov A.V.
, Novikov Y.N.
, Baraban A.P.
, Wong H.
, Zhidomirov G.M.
, Roger M.
Onefold Coordinated Oxygen Atom: An Electron Trap in the Silicon Oxide
Microelectronics Reliability. 2003. V.43. N4. P.665-669. DOI: 10.1016/S0026-2714(03)00030-1 WOS Scopus РИНЦ
Onefold Coordinated Oxygen Atom: An Electron Trap in the Silicon Oxide
Microelectronics Reliability. 2003. V.43. N4. P.665-669. DOI: 10.1016/S0026-2714(03)00030-1 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 16 сент. 2002 г. |
Принята к публикации: | 7 янв. 2003 г. |
Опубликована online: | 11 мар. 2003 г. |
Опубликована в печати: | 1 апр. 2003 г. |
Идентификаторы БД:
Web of science | WOS:000182363300019 |
Scopus | 2-s2.0-0037381456 |
РИНЦ | 13425155 |
Chemical Abstracts | 2003:380541 |
Chemical Abstracts (print) | 140:102658 |
OpenAlex | W2034662491 |