The Atomic Structure and Chemical Composition of HfOx (x<2) Films Prepared by Ion-Beam Sputtering Deposition Научная публикация
Журнал |
Materials Research Express
, E-ISSN: 2053-1591 |
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Вых. Данные | Год: 2016, Том: 3, Номер статьи : 085008, Страниц : 8 DOI: 10.1088/2053-1591/3/8/085008 | ||||||
Ключевые слова | Hf4O7 suboxide, IBSD, ReRAM | ||||||
Авторы |
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Организации |
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Информация о финансировании (1)
1 | Российский научный фонд | 14-19-00192 |
Реферат:
Non-stoichiometric HfOx films of different chemical composition (x<2) were fabricated by ionbeam sputtering deposition (IBSD) at room temperature. The ratio ofOand Hf atoms in films x was varied by setting theO2 partial pressure in a chamber. An effect of chemical composition on the atomic structure of the films was studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy and field emission scanning electron microscopy methods. The films were found to be amorphous, consisting only of three components: Hf-metal clusters, Hf4O7 suboxide and stoichiometric HfO2. The relative concentration of these components varies with changing x. The surface of the films contains the increased oxygen content compared to the bulk. It was found that the Hf4O7 suboxide concentration is maximal at x=1.8. The concept of hafnium oxide film growth by the IBSD method is proposed to explain the lack of suboxides variety in the films and the instability of HfO2, when annealed at high temperature.
Библиографическая ссылка:
Aliev V.S.
, Gerasimova A.K.
, Kruchinin V.N.
, Gritsenko V.A.
, Prosvirin I.P.
, Badmaeva I.A.
The Atomic Structure and Chemical Composition of HfOx (x<2) Films Prepared by Ion-Beam Sputtering Deposition
Materials Research Express. 2016. V.3. 085008 :1-8. DOI: 10.1088/2053-1591/3/8/085008 WOS Scopus РИНЦ
The Atomic Structure and Chemical Composition of HfOx (x<2) Films Prepared by Ion-Beam Sputtering Deposition
Materials Research Express. 2016. V.3. 085008 :1-8. DOI: 10.1088/2053-1591/3/8/085008 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 3 июн. 2016 г. |
Принята к публикации: | 11 июл. 2016 г. |
Опубликована в печати: | 1 авг. 2016 г. |
Опубликована online: | 4 авг. 2016 г. |
Идентификаторы БД:
Web of science | WOS:000402887400002 |
Scopus | 2-s2.0-84987660569 |
РИНЦ | 27573105 |
Chemical Abstracts | 2016:1729247 |
OpenAlex | W2504972446 |