Silicon Carbonitride Films as New Materials Obtained by Plasma Chemical Vapor Deposition from Novel Precursor
Научная публикация
| Общее |
Язык:
Английский,
Жанр:
Статья (Full article),
Статус опубликования:
Опубликована,
Оригинальность:
Оригинальная
|
| Конференция |
Complex Mediums II: Beyond Linear Isotropic Dielectrics : International Symposium on Optical Science and Technology
29 июл. - 3 авг. 2001
,
San Diego, CA
|
| Сборник |
Complex Mediums II: Beyond Linear Isotropic Dielectrics : International Symposium on Optical Science and Technology
Сборник,
2001.
|
| Журнал |
Proceedings of SPIE - The International Society for Optical Engineering
ISSN: 0277-786X
|
| Вых. Данные |
Год: 2001,
Том: 4467,
Страницы: 366-376
Страниц
: 11
DOI:
10.1117/12.432950
|
| Ключевые слова |
Plasma chemical vapor deposition, Silicon carbide nitride, Thin films |
| Авторы |
Smirnova T.P.
1
,
Shmakov A.N.
2
,
Badalyan A.M.
1
,
Kaichev V.V.
2
,
Bukhtiyarov V.I.
2
,
Rakhlin V.I.
3
,
Fomina A.N.
3
|
| Организации |
| 1 |
Institute of Inorganic Chemistry SB RAS, 3 Lavrent'ev Ave., Novosibirsk, 630090, Russia
|
| 2 |
Boreskov Institute of Catalysis SB RAS, 5 Lavrent'ev Ave., Novosibirsk, 630090, Russia
|
| 3 |
Favorsky Institute of Chemistry, SB RAS, Irkutsk, 664000, Russia
|
|
Silicon carbonitride films were synthesised by RP CVD process using the novel single-source precursor that is derivative of 1, 1-dimethylhydrazine, (CH3)2HSiNHN(CH3)2. The films were characterized by X-ray photoelectron (XPS), infrared (FTIR) and ultraviolet (UV) spectroscopy. The microstructure of the films was examined by scanning electron microscopy (SEM) and diffraction of synchrotron radiation (DSR) methods. XPS and FT-IR spectroscopy studies showed that the Si-C and Si-N are the main bonds in the deposited films. Concerning the C-N bonds, the results are less obvious: they are either negligible or not present at all. The films were found to be predominately amorphous with a number of crystallites within the unstructured matrix. The crystals appearance, their dimensions and crystal form did not depend on substrate temperature. We hypothesised that crystallisation could happen in the gas phase during deposition or nanocrystals were formed by the strain induced after a certain thickness of the amorphous film. The crystals were assigned to the structure closed to α-Si3N4 phase. According to FTI and XPS data it is clear that the chemical bonding and the atomic local order in the amorphous matrix are much more complicated than those of Si3N4-SiC mixtures. We concluded that tetrahedral configurations of silicon carbide and silicon nitride units mixed C/N environment are hypothetically formed. The films are highly resistant to thermal degradation. It was also demonstrated that this new material has a band gap that was variable from 2.0 eV to 4.7 eV