Barrier Characteristics and Interface Properties of Au/Ti/n-InAlAs Schottky Contacts
Научная публикация
| Общее |
Язык:
Английский,
Жанр:
Статья (Full article),
Статус опубликования:
Опубликована,
Оригинальность:
Оригинальная
|
| Журнал |
Materials Science in Semiconductor Processing
ISSN: 1369-8001
, E-ISSN: 1873-4081
|
| Вых. Данные |
Год: 2018,
Том: 74,
Страницы: 193-198
Страниц
: 6
DOI:
10.1016/j.mssp.2017.10.014
|
| Ключевые слова |
ELECTRON-TRANSPORT; N-TYPE; DIODES |
| Авторы |
Chistokhin I.B.
1
,
Aksenov M.S.
1,2
,
Valisheva N.A.
1
,
Dmitriev D.V.
1
,
Kovchavtsev A.P.
1
,
Gutakovskii A.K.
1,2
,
Prosvirin I.P.
2,3
,
Zhuravlev K.S.
1,2
|
| Организации |
| 1 |
Rzhanov Institute of Semiconductor Physics SBRAS, 13 Lavrentiev Avenue, Novosibirsk 630090, Russian Federation
|
| 2 |
Novosibirsk State University, 2 Pirogov Street, Novosibirsk 630090, Russian Federation
|
| 3 |
Boreskov Institute of Catalysis, 5 Lavrentiev Avenue, Novosibirsk 630090, Russian Federation
|
|
Информация о финансировании (2)
|
1
|
Российский научный фонд
|
14-22-00143
|
|
2
|
Российский фонд фундаментальных исследований
|
14-29-08124
|
The InAlAs surface morphology (AFM), chemical composition (XPS) and the Ti/InAlAs interface structure (HREM), during the Au/Ti/n-In0.52Al0.48As/InP(001) mesa-structure Schottky barrier formation, were studied. The current-voltage (I-V) dependences analysis of the formed Schottky barrier in the temperature range of 100–380 K was carried out. It was shown that the I-V dependences are well described by the thermionic emission theory at temperatures above 200 K with the ideality factor and the barrier height close to 1.09 and 0.7 eV, respectively. At temperatures below 200 K, the I-V behavior is attributed to the Schottky barrier anomalies, which are explained by the existence of nanometer-sized patches with a low barrier height having a Gaussian distribution (Tung model). According to this model, the temperature dependences of the barrier height and ideality factor were described with the following parameters: the homogeneous barrier height of 0.88 eV and standard deviation of 10−4 cm2/3V1/3. In the analysis of the modified Richardson plot, the Richardson constant (10.7 Acm−2 K−2) and the area fraction (24%), occupied by the patches with a low barrier height and diameter ~80 nm, were calculated. The patches appearance is explained by the presence of the spikes detected on the InAlAs surface by the AFM method.