Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides Научная публикация
Конференция |
7th Forum on New Materials 05-09 июн. 2016 , Perugia |
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Журнал |
Advances in Science and Technology
ISSN: 1662-0356 |
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Вых. Данные | Год: 2016, Том: 99, Страницы: 69-74 Страниц : 6 DOI: 10.4028/www.scientific.net/ast.99.69 | ||||||||||
Ключевые слова | hafnium sub-oxides, RRAM, ReRAM, low resistance state, fluctuations | ||||||||||
Авторы |
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Организации |
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Реферат:
We study the structure of nonstoichiometric HfOx films with variable composition using
methods of XPS, spectroscopic ellipsometry, and ab initio calculations. According to XPS and optical
absorption experiment data HfOx consists of metal Hf and 10-15% of nonstoichiometric hafnium suboxide HfOy (y < 2). HfOy can be placed between HfO2 and Hf, inside HfO2, inside Hf. According to
this model space fluctuations of chemical composition cause space fluctuations of bandgap in HfOx.
We found that transport in such electronic systems is described by percolation theory. This approach
can be applied to explain LRS transport of HfOx-based RRAM.
Библиографическая ссылка:
Islamov D.R.
, Kruchinin V.N.
, Aliev V.S.
, Perevalov T.V.
, Gritsenko V.A.
, Prosvirin I.P.
, Orlov O.M.
, Chin A.
Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides
Advances in Science and Technology. 2016. V.99. P.69-74. DOI: 10.4028/www.scientific.net/ast.99.69 РИНЦ
Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides
Advances in Science and Technology. 2016. V.99. P.69-74. DOI: 10.4028/www.scientific.net/ast.99.69 РИНЦ
Даты:
Поступила в редакцию: | 25 мар. 2016 г. |
Принята к публикации: | 27 июл. 2016 г. |
Опубликована online: | 31 окт. 2016 г. |
Идентификаторы БД:
РИНЦ | 44657172 |
OpenAlex | W2542325589 |