Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots Научная публикация
Журнал |
Письма в Журнал экспериментальной и теоретической физики
ISSN: 0370-274X |
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Вых. Данные | Год: 2014, Том: 99, Номер: 2, Страницы: 81-86 Страниц : 6 DOI: 10.7868/S0370274X14020040 | ||||||
Ключевые слова | DEFORMATION POTENTIALS; GAP; SEMICONDUCTORS | ||||||
Авторы |
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Организации |
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Реферат:
Band alignment of heterostructures with pseudomorphic GaSb1−xPx/GaP self-assembled quantum dots (SAQDs) lying on wetting layer was studied. Coexistence of type-I and type-II band alignment was found within the same heterostructure. Wetting layer has band alignment of type-I with the lowest electronic state belonging to the XXY valley of GaSb1−xPx conduction band, in contrast to SAQDs, which have band alignment of type-II, independently of the ternary alloy composition x. It is shown that type-I – type-II transition is a result of GaP matrix deformation around the SAQD.
Библиографическая ссылка:
Abramkin D.S.
, Shamirzaev V.T.
, Putyato M.A.
, Gutakovskii A.K.
, Shamirzaev T.S.
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Письма в Журнал экспериментальной и теоретической физики. 2014. V.99. N2. P.81-86. DOI: 10.7868/S0370274X14020040 РИНЦ
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Письма в Журнал экспериментальной и теоретической физики. 2014. V.99. N2. P.81-86. DOI: 10.7868/S0370274X14020040 РИНЦ
Переводная:
Abramkin D.S.
, Shamirzaev V.T.
, Putyuto M.A.
, Gutakovskii A.K.
, Shamirzaev T.S.
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2014. V.99. N2. P.76-81. DOI: 10.1134/S0021364014020027 WOS Scopus РИНЦ
Coexistence of Type-I and Type-II Band Alignment in Ga(Sb,P)/GaP Heterostructures with Pseudomorphic Self-Assembled Quantum Dots
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2014. V.99. N2. P.76-81. DOI: 10.1134/S0021364014020027 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 8 нояб. 2013 г. |
Опубликована в печати: | 1 мар. 2014 г. |
Идентификаторы БД:
РИНЦ | 21305878 |
Цитирование в БД:
Пока нет цитирований